BZW04P85B datasheet, PDF - EEWORLD Datasheet

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BZW04P85B: DescriptionTrans Voltage Suppressor Diode, 85.5V V(RWM), Bidirectional,; CategoryDiscrete semiconductor diode; File Size317KB，4 Pages; ManufacturerGalaxy Microelectronics; Environmental Compliance

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BZW04P85B Overview

Trans Voltage Suppressor Diode, 85.5V V(RWM), Bidirectional,

BZW04P85B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Microelectronics
Reach Compliance Code	unknown
Breakdown voltage nominal value	102.5 V
Maximum clamping voltage	137 V
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
polarity	BIDIRECTIONAL
Maximum repetitive peak reverse voltage	85.5 V
surface mount	NO

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FEATURES

GALAXY ELECTRICAL

BZW04P-5V8 --- BZW04-376

BREAKDOWN VOLTAGE: 5.8 --- 376 V

PEAK PULSE POWER: 400 W

TRANSIENT VOLTAGE SUPPRESSOR

Plastic package

has

underwriters laboratory

flam

mability

classification

94V-0

Glass passivated junction

400W peak pulse power capability with a 10/1000μs

waveform, repetition rate (duty cycle): 0.01%

Excellent clam ping capability

Fast response tim e: typically less than 1.0ps from 0 Volts to

(BR)

for uni-directional and 5.0ns for bi-directional types

Devices with V

(BR)

10V I

are typically I

less than 1.0

μA

High temperature soldering guaranteed:265 / 10 seconds,

0.375"(9.5mm) lead length, 5lbs. (2.3kg) tension

DO-41

MECHANICAL DATA

Case:JEDEC DO--41, molded plastic body over

passivated junction

Term inals:

axial

leads, solderable per MIL-STD-750,

m ethod 2026

Polarity:

foruni-directional

types the color band denotes

the cathode, which is postitive with respect to the

anode under normal TVS operation

Weight: 0.012 ounces, 0.34 gram s

Mounting position:

any

Dimensions in millimeters

DEVICES FOR BIDIRECTIONAL APPLICATIONS

For bi-directional use add suffix letter "B" (e.g. BZW04P-6V4B).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25

ambient tem perature unless otherwise specified.

SYMBOL

Peak

pow

dissipation

w ith a 10/1000μs w aveform (NOTE 1, FIG.1)

Peak

pulse current

w ith a 10/1000μs w aveform (NOTE 1)

Steady

state pow

dissipation

at T

=75

fffffLead

lengths

0.375"(9.5mm) (NOTE 2)

Peak

forw

ard

surge current,

8.3ms

single

half

ffffSine-wave

superimposed

rated load

(JEDEC Method) (NOTE 3)

Maximum

instantaneous forw

ard

voltage

at 25A for unidirectional only (NOTE 4)

Operating

junction

and

storage temperature range

VALUE

Minimum 400

See

table

1.0

40.0

3.5/6.5

-55---+150

UNIT

PPM

M(AV)

FSM

, T

STG

NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T

=25 per Fig. 2

(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm

) per Fig. 5

(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum

(4) V

=3.5 Volt max. for devices of V

(BR)

220V, and V

=5.0 Volt max. for devices of V

(BR)

>220V

www.galaxycn.com

Document Number

1785007

GALAXY ELECTRICAL

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