DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBT4403
PNP switching transistor
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 21
NXP Semiconductors
Product data sheet
PNP switching transistor
FEATURES
•
High current (max. 600 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
Industrial and consumer switching applications.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complement: PMBT4401.
MARKING
TYPE NUMBER
PMBT4403
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
PMBT4403
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
*2T
Top view
handbook, halfpage
PMBT4403
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−40
−40
−5
−600
−800
−200
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2004 Jan 21
2
NXP Semiconductors
Product data sheet
PNP switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−40
V
I
C
= 0; V
EB
=
−5
V
V
CE
=
−1
V; (see Fig.2)
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
V
CE
=
−2
V
I
C
=
−150
mA
I
C
=
−500
mA
V
CEsat
V
BEsat
C
c
C
e
f
T
t
on
t
d
t
r
t
off
t
s
t
f
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
=
−150
mA; I
B
=
−15
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−150
mA; I
B
=
−15
mA
I
C
=
−500
mA; I
B
=
−50
mA
I
E
= I
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= I
c
= 0; V
EB
=
−500
mV; f = 1 MHz
100
20
−
−
−
−
−
−
30
60
100
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
PMBT4403
VALUE
500
UNIT
K/W
MAX.
−50
−50
−
−
−
300
−
−400
−750
−950
−1.3
8.5
35
−
UNIT
nA
nA
mV
mV
mV
V
pF
pF
MHz
I
C
=
−20
mA; V
CE
=
−10
V; f = 100 MHz 200
I
Con
=
−150
mA; I
Bon
=
−15
mA;
I
Boff
= 15 mA
−
−
−
−
−
−
Switching times (between 10% and 90% levels);
(see Fig.3)
turn-on time
delay time
rise time
turn-off time
storage time
fall time
40
15
30
350
300
50
ns
ns
ns
ns
ns
ns
2004 Jan 21
3
NXP Semiconductors
Product data sheet
PNP switching transistor
PMBT4403
ndbook, full pagewidth
300
MGD812
hFE
VCE =
−1
V
200
100
0
−10
−1
−1
−10
−10
2
IC mA
−10
3
Fig.2 DC current gain; typical values.
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MGD624
V
i
=
−9.5
V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 68
Ω;
R2 = 325
Ω;
R
B
= 325
Ω;
R
C
= 160
Ω.
V
BB
= 3.5 V; V
CC
=
−29.5
V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.3 Test circuit for switching times.
2004 Jan 21
4
NXP Semiconductors
Product data sheet
PNP switching transistor
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
PMBT4403
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 21
5
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