BUT30V
NPN TRANSISTOR POWER MODULE
s
s
s
s
s
s
s
NPN TRANSISTOR
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R
th
JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
ISOLATED CASE (2500V RMS)
EASY TO MOUNT
LOW INTERNAL PARASITIC INDUCTANCE
Pin 4 not con nected
APPLICATIONS:
s
MOTOR CONTROL
s
SMPS & UPS
s
WELDING EQUIPMENT
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
EBO
I
C
I
CM
I
B
I
BM
P
t ot
T
stg
T
j
V
ISO
July 1997
Parameter
Collector-Emitter Voltage (V
BE
= -5 V)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
= 10 ms)
Base Current
Base Peak Current (t
p
= 10 ms)
Total Dissipation at T
c
= 25 C
St orage Temperature
Max. Operating Junction Temperature
Insulation W ithstand Voltage (AC-RMS)
o
Value
200
125
7
100
150
20
30
250
-55 to 150
150
2500
Uni t
V
V
V
A
A
A
A
W
o
o
V
CEO(sus)
Collector-Emitter Voltage (I
B
= 0)
C
C
V
1/7
BUT30V
THERMAL DATA
R
t hj-ca se
R
thc -h
Thermal Resistance Junction-case
Thermal Resistance Case-heats ink With Conductive
Grease Applied
Max
Max
0.5
0.05
o
C/W
C/W
o
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CER
I
CEV
I
EBO
Parameter
Collector Cut-off
Current (R
BE
= 5
Ω)
Collector Cut-off
Current (V
BE
= -5V)
Emitter Cut-off Current
(I
C
= 0)
Test Cond ition s
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
EB
= 5 V
I
C
= 0.2 A
L = 25 mH
V
c la mp
= 125 V
I
C
= 100 A
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
=
=
=
50 A
50 A
100 A
100 A
50 A
50 A
100 A
100 A
V
CE
= 5 V
I
B
I
B
I
B
I
B
I
B
I
B
I
B
I
B
=
=
=
=
=
=
=
=
2.5 A
2.5 A
10 A
10 A
2.5 A
2.5 A
10 A
10 A
T
j
= 100 C
T
j
= 100 C
T
j
= 100 C
T
j
= 100 C
270
o
o
o
o
Min.
Typ .
Max.
1
5
1
4
1
Un it
mA
mA
mA
mA
mA
V
T
j
= 100 C
T
j
= 100 C
o
o
V
CEO(SUS)
* Collector-Emitter
Sustaining Voltage
h
FE
∗
V
CE(sat )
∗
DC Current G ain
Collector-Emitter
Saturation Voltage
125
27
0.45
0.55
0.7
0.9
1.15
1.1
1.45
1.55
350
2.7
2
1
0.1
0.2
125
3.5
2.5
2
0.2
0.35
0.9
1.2
0.9
1.5
1.4
1.4
1.8
1.9
V
V
V
V
V
V
V
V
A/µs
V
V
µs
µs
µs
V
V
BE(s at)
∗
Base-Emitter
Saturation Voltage
di
C
/dt
Rate of Rise of
On-state Collector
V
CC
= 300 V
I
B1
= 15 A
V
CC
= 300 V
I
B1
= 15 A
V
CC
= 300 V
I
B1
= 15 A
R
C
= 0
t
p
= 3
µs
o
T
j
= 100 C
R
C
= 1
Ω
T
j
= 100
o
C
R
C
= 1
Ω
o
T
j
= 100 C
•
V
CE
(3
µs)•
Collector-Emitter
Dynamic Voltage
•
V
CE
(5
µs)•
Collector-Emitter
Dynamic Voltage
t
s
t
f
t
c
V
CEW
Storage Time
Fall T ime
Cross-over T ime
Maximum Collector
Emitter Voltage
Without Snubber
I
C
= 100 A
V
CC
= 90 V
V
BB
= -5 V
R
BB
= 0.47
Ω
V
c la mp
= 125 V I
B1
= 10 A
L = 45
µH
T
j
= 100
o
C
I
CW off
= 150 A
V
BB
= -5 V
L = 30
µH
T
j
= 125
o
C
I
B1
= 10 A
V
CC
= 90 V
R
BB
= 0.5
Ω
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
2/7
BUT30V
Safe Operating Areas
Thermal Impedance
Derating Curve
Collector-emitter Voltage Versus
base-emitter Resistance
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
3/7
BUT30V
Reverse Biased SOA
Foward Biased SOA
Reverse Biased AOA
Forward Biased AOA
Switching Times Inductive Load
Switching Times Inductive Load Versus
Temperature
4/7
BUT30V
Dc Current Gain
Turn-on Switching Test Circuit
(1) Fast electronic switch
(2) Non-inductive load
Turn-on Switching Waveforms
Turn-off Switching Test Circuit
Turn-off Switching Waveforms
(1) Fast electronic switch
(3) Fast recovery rectifier
(2) Non-inductive load
5/7
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