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BZV55C4V7

Description
Zener Diode, 4.7V V(Z), 6.38%, 0.5W, Silicon, Unidirectional, MELF-2
CategoryDiscrete semiconductor    diode   
File Size418KB,5 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
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BZV55C4V7 Overview

Zener Diode, 4.7V V(Z), 6.38%, 0.5W, Silicon, Unidirectional, MELF-2

BZV55C4V7 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionO-LELF-R2
Reach Compliance Codecompliant
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage4.7 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance6.38%
Working test current5 mA
BZV55C-SERIES
Technical Data
Data Sheet N0200, Rev. B
ZENER DIODES
Zener Voltage: 2.4-180V Peak Pulse Power: 500mW
Features
Low zener impedance
Low regulation factor
Glass passivated junction
High temperature soldering guaranteed: 260°C/10S
at terminals
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
BZV55C/ZMM55C-SERIES
Mini MELF/DL-35
Circuit Diagram
Mechanical Data
Case: MINI MELF/DL-35 molded glass body
Terminals: Plated leads, solderable per MIL-STD 750,
method 2026
Polarity: Color band denotes cathode end Mounting
Position: Any
Weight: 0.002 ounce, 0.05
gram
Marking: Cathode band
Maximum Ratings
@T
A
=25°C unless otherwise specified
Parameter
Zener Current see Table Characteristics
Power Dissipation at Tamb=25°C(Note1)
Operating Junction Temperature
Storage Temperature Range
Typical Thermal resistance junction to Ambient(Note
1)
Forward Voltage
@ I
F
= 100mA
P
D
T
J
T
STG
R
θJA
V
F
500
200
-65 to 200
0.3
1.0
mW
°C
°C
K/mW
V
Symbol
Value
Units
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
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