ASMT-MxK0
Moonstone
TM
1W Power LED Light Source on MCPCB
Data Sheet
Description
1W Power LED Light Source is a high performance energy
efficient device which can handle high thermal and high
driving current. The exposed pad design has excellent
heat transfer from the package to the motherboard.
The 1W Power LED light source is mounted on to metal
core PCB enabling optimum heat dissipation and ease of
installation.
The low profile package design is suitable for a wide variety
of applications especially where height is a constraint.
Features
•
Available in Red, Amber, Green, Blue, Cool White and
Warm White color.
•
Energy efficient
•
High current operation.
•
Long operation life.
•
Wide viewing angle.
•
Silicone encapsulation
Specifications
•
AllnGaP Technology for Red and Amber
•
InGaN Technology for Green, Blue, Cool White and
Warm White color
•
2.4V, 350mA (typical) for AlInGaP Technology
•
3.6V, 350 mA (typical) for InGaN Technology
•
110 viewing angle for White Products
•
120 viewing angle for Mono color Products
Applications
•
Portable (flash light, bicycle head light)
•
Reading light
•
Architectural lighting
•
Garden lighting
•
Decorative lighting
Package Dimensions
Notes:
1. All dimensions in millimeters
2. Tolerance is ±0.1mm unless otherwise specified.
2
Device Selection Guide at Junction Temperature T
j
= 25°C
Luminous Flux, Φ
v[1,2,3]
(lm)
Color
Red
Amber
Green
Blue
Cool White
Warm White
Test Current
Max
56.0
43.0
73.0
25.5
73.0
73.0
Part Number
ASMT-MRK0
ASMT-MAK0
ASMT-MGK0
ASMT-MBK0
ASMT-MWK0
ASMT-MYK0
Min
25.5
25.5
43.0
11.5
43.0
43.0
Typ
40.0
35.0
60.0
15.0
60.0
50.0
(mA)
350
350
350
350
350
350
Dice Technology
AlInGaP
AlInGaP
InGaN
InGaN
InGaN
InGaN
Notes:
1. Φ
V
is the total luminous flux output as measured with an integrating sphere at 25ms mono pulse condition.
2. Flux tolerance is ±10 %
3. Φ
V
data are only applicable for ASMT-Mx00 component level device only.
Part Numbering System
ASMT- M x KO -x1 x2 x3
Color Bin Selection
Max Flux Bin Selection
Min Flux Bin Selection
B -
G -
W-
Y-
Color
Blue
Green
Cool White
Warm White
Absolute Maximum Ratings
[4]
at T
A
= 25°C
Parameters
DC Forward Current
[5]
Peak Pulsing Current
[6]
Power Dissipation for AllnGaP
Power Dissipation for InGaN
LED Junction Temperature for AllnGaP
LED Junction Temperature for InGaN
Operating Ambient Temperature Range
Storage Temperature Range
ASMT - Mx KO
350
500
1050
1400
120
110
-40 to + 85
-40 to + 100
Units
mA
mA
mW
mW
°C
°C
°C
°C
Note:
4. Absolute Maximum Rating data are only applicable for ASMT-Mx00 component level device only.
5. DC forward current – derate linearly based on Figure 5 for AlInGaP & Figure 11 for InGaN.
6. Pulse condition duty factor = 10%, Frequency = 1kHz.
3
Optical Characteristics
[1]
(T
A
= 25 °C)
Peak Wavelength
λ
PEAK
(nm)
Part Number
ASMT-MRK0
ASMT-MAK0
ASMT-MGK0
ASMT-MBK0
Dominant Wavelength
λ
D [2]
(nm)
Typ.
625
590
525
467
Viewing Angle
2θ
½[3]
(Degrees)
Typ.
120
120
120
120
Luminous Efficiency
(lm/W)
Typ.
48
42
48
12
Color
Red
Amber
Green
Blue
Typ.
635
598
519
460
Correlated Color Temperature, CCT
(Kelvin)
Part Number
ASMT-MWK0
ASMT-MYK0
Viewing Angle
2θ
½ [2]
(Degrees)
Typ
110
110
Luminous Efficiency
(lm/W)
Typ
48
40
Color
Cool White
Warm White
Min
4000
2600
Max
10000
4000
Notes:
1. Optical Characteristics data are only applicable for ASMT-Mx00 component level device only.
2. The dominant wavelength,
λ
D
, is derived from the CIE Chromaticity Diagram and represents the color of the device.
3.
θ½
is the off-axis angle where the luminous intensity is ½ the peak intensity.
Electrical Characteristic
[4]
(T
A
= 25 °C)
Forward Voltage V
F
(Volts) @ I
F
= 350mA
Dice Type
AlInGaP
InGaN
Reverse Voltage V
R
(Volts)
Max.
3.0
4.0
Thermal Resistance
R
θj-b
(°C/W)
[5]
Typ.
12
18
Min
2.0
3.2
Typ
2.4
3.6
Max.
5
5
Note:
4. Electrical Characteristic data are only applicable for ASMT-Mx00 component level device only.
5. R
Θj-b
is Thermal Resistance from LED junction to MCPCB.
4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
380
RELATIVE INTENSITY
FORWARD CURRENT - mA
RED
AMBER
430
480
530 580 630
WAVELENGTH - nm
680
730
780
500
450
400
350
300
250
200
150
100
50
0
0.00
0.50
1.00
1.50
2.00
FORWARD VOLTAGE - V
2.50
3.00
Figure 1. Relative Intensity vs. Wavelength for AlInGaP
Figure 2. Forward Current vs Forward Voltage for AlInGaP
1.4
RELATIVE LUMINOUS FLUX (φv) - lm
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
50
100 150 200 250 300 350 400 450 500
MONO PULSE CURRENT - mA
RELATIVE INTENSITY
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-90
-70
-50
-30
-10 10 30
OFF-AXIS ANGLE(°)
50
70
90
Figure 3. Relative Luminous Flux vs. Mono Pulse Current for AlInGaP
Figure 4. Radiation Pattern for AlInGaP
400
RELATIVE LOP (NORMALIZED AT 25⁰C)
I
F
MAX FORWARD CURRENT - mA
2
R
JA
= 50°C/W
R
JA
= 40°C/W
R
JA
= 30°C/W
1.5
1
0.5
0
RED
AMBER
350
300
250
200
150
100
50
0
0
10
20
30
40
50
60
T
A
AMBIENT TEMPERATURE - °C
70
80
90
-40
-25
-10
5 20 35 50 65
JUNCTION TEMPERATURE - ˚C
80
95
110
Figure 5. Maximum forward current vs. ambient temperature for AlInGaP
Derated based on T
J
MAX = 120°C, R
θJA
= 30°C/W / 40°C/W and 50°C/W
Figure 6. Relative LOP (Normalized at 25°C) vs. junction temperature for
AlInGaP
5
NXP MCU
京公网安备 11010802033920号
EEWORLD
