TMB16xS Series
Triac (Bidirectional Triode Thyristor)
Features and Benefits
▪
Exceptional reliability
▪
Small fully-molded SIP package with heatsink mounting
for high thermal dissipation and long life
▪
V
DRM
of 600 V
▪
16 A
RMS
on-state current
▪
Uniform switching
▪
UL Recognized Component (File No.: E118037) (suffix I)
Description
This Sanken triac (bidirectional triode thyristor) is designed
for AC power control, providing reliable, uniform switching
for full-cycle AC applications.
In comparison with other products on the market, the TMB16xS
series provides increased isolation voltage (1800 VAC
RMS
),
guaranteed for up to 1 minute, and greater peak nonrepetitive
off-state voltage, V
DSM
(700 V). In addition, commutation
dv/dt and (dv/dt)c are improved.
Package: 3-pin SIP (TO-220F)
Applications
▪
Residential and commercial appliances: vacuum cleaners,
rice cookers, TVs, home entertainment
▪
White goods: washing machines
▪
Office automation power control, photocopiers
▪
Motor control for small tools
▪
Temperature control, light dimmers, electric blankets
▪
General use switching mode power supplies (SMPS)
Not to scale
Typical Applications
Halogen
Lamp
Gate
Controller
Heater control
(for example, LBP. PPC, MFP)
Two-phase motor control
(for example, washing machine)
In-rush current control
(for example, SMPS)
28105.15
TMB16xS
Series
Selection Guide
Part Number
TMB166(I)
TMB166S-L
Triac (Bidirectional Triode Thyristor)
V
DRM
(V)
600
600
UL-Recognized
Component
Yes
–
Package
3-pin fully molded SIP with
heatsink mount
Packing
50 pieces per tube
Absolute Maximum Ratings
Characteristic
Peak Repetitive Off-State Voltage
Peak Non-Repetitive Off-State Voltage
Isolation Voltage
RMS On-State Current
Symbol
V
DRM
V
DSM
V
ISO
I
T(RMS)
R
GREF
=
∞
R
GREF
=
∞
AC RMS applied for 1 minute between lead and case
50/60 Hz full cycle sine wave,
total Conduction angle (α+)
+ (α–) =
360°,
T
C
= 94°C
f = 60 Hz
Surge On-State Current
I
2
t Value for Fusing
Critical Rising Rate of On-State
Current
Peak Gate Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Junction Temperature
Storage Temperature
I
TSM
f = 50 Hz
I
2
t
di/dt
I
GM
P
GM
P
GM(AV)
T
J
T
stg
Full cycle sine wave, peak value, non-repetitive,
initial T
J
= 150°C
Notes
Rating
600
700
1800
16
168
160
128
25
2
5
0.5
–40 to 150
–40 to 150
Units
V
V
V
A
A
A
A
2
• s
A/μs
A
W
W
ºC
ºC
Value for 50 Hz half cycle sine wave, 1 cycle, I
TSM
= 160 A
I
T
= I
T(RMS)
×
2
1/2
, V
D
= V
DRM
× 0.5, f
≤
60 Hz, t
gw
≥
10
μs,
t
gr
≤
250 ns, i
gp
≥
60 mA (refer to Gate Trigger Circuit diagram)
f
≥
50 Hz, duty cycle
≤
10%
f
≥
50 Hz, duty cycle
≤
10%
T
J
< T
J
(max)
Thermal Characteristics
May require derating at maximum conditions
Characteristic
Package Thermal Resistance
(Junction to Case)
Symbol
R
θJC
For AC
Test Conditions
Value
3.0
Units
ºC/W
Pin-out Diagram
T2
Number
1
Terminal List Table
Name
T1
T2
G
Function
Main terminal, gate referenced
Main terminal connect to signal side
Gate control
G
T1
2
3
1 2 3
All performance characteristics given are typical values for circuit or
system baseline design only and are at the nominal operating voltage and
an ambient temperature, T
A
, of 25°C, unless otherwise stated.
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
2
TMB16xS
Series
ELECTRICAL CHARACTERISTICS
Characteristics
Off-State Leakage Current
On-State Voltage
Symbol
I
DRM
V
TM
V
GT
Triac (Bidirectional Triode Thyristor)
Test Conditions
V
D
= V
DRM
, T
J
= 150°C, R
GREF
=
∞
using test circuit 1
V
D
= V
DRM
, T
J
= 25°C, R
GREF
=
∞
using test circuit 1
I
T
= 20 A, T
J
= 25°C
Quadrant I: T2+, G+
Quadrant II: T2+, G–
Quadrant III: T2–, G–
Quadrant I: T2+, G+
V
D
= 12 V, R
L
= 20
Ω,
T
J
= 25°C
V
D
= 12 V, R
L
= 20
Ω,
T
J
= 25°C
Min.
–
–
–
–
–
–
–
–
–
0.2
10
Typ.
–
–
–
–
–
–
–
–
–
–
–
Max.
2.0
100
1.45
1.5
1.5
1.5
30
30
30
–
–
Unit
mA
μA
V
V
V
V
mA
mA
mA
V
V/μs
Gate Trigger Voltage
Gate Trigger Current
I
GT
V
GD
(dv/dt)c
Quadrant II: T2+, G–
Quadrant III: T2–, G–
Gate Non-trigger Voltage
Critical Rising Rate of
Off-State Voltage during
Commutation*
Critical Rising Rate of Off-
State Voltage
V
D
= V
DRM
× 0.5, R
L
= 4 kΩ, T
J
= 125°C
V
D
= 400 V, (di/dt)c = –8 A/ms, I
TP
= 2 A, T
J
= 125°C
V
D
= V
DRM
× 0.67, R
GREF
=
∞
, T
J
= 125°C
dv/dt
30
–
–
V/μs
*Where I
TP
is the peak current through T2 to T1.
Test Circuit 1
Gate Trigger Characteristics
+T2
Quadrant II
Quadrant I
T2 [ + ]
T2
T2 [ + ]
R
GREF
=
∞
G
T1
T1 [ – ]
G[–]
T1 [ – ]
G[+]
–I
GT
T2 [ – ]
T2 [ – ]
+I
GT
G[–]
T1 [ + ]
T1 [ + ]
G[+]
Gate Trigger Current
t
gr
Quadrant III
–T2
Polarities referenced to T1
Quadrant IV
i
gp
t
gw
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
3
TMB16xS
Series
Triac (Bidirectional Triode Thyristor)
Commutation Timing Diagrams
Supply VAC
= Conduction angle
V
GT
V
GATE
I
TSM
On-State
Currrent
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
4
TMB16xS
Series
Triac (Bidirectional Triode Thyristor)
Performance Characteristics at T
A
= 25°C
100
180
T
J
= 150°C
160
140
I
T
(max) (A)
10
120
I
TSM
(A)
Surge On-State
Current versus
Quantity of
Cycles
f = 50 Hz
full cycle sine wave
total Conduction angle
( +) + ( –) = 360°
initial T
J
= 150°C
Maximum On-State
Current versus
Maximum On-State
Voltage
100
80
60
40
20
1
T
J
= 25°C
0
0.6
0
1.0
1.4
1.8
2.2
V
T
(max) (V)
2.6
3.0
1
10
Quantity of Cycles
100
25
full cycle sine wave
total Conduction angle
( +) + ( –) = 360°
150
125
100
full cycle sine wave
total Conduction angle
( +) + ( –) = 360°
20
P
T(AV)
(W)
On-State Average
Power Dissipation
versus Maximum
On-State
RMS Current
T
C
(°C)
15
Case Temperature
versus On-State
RMS Current
94°C
75
50
10
5
25
0
0
0
5
10
15
I
T(RMS)
(max) (A)
20
0
2.0
V
GT
(T
J
) (V) / V
GT
(T
J
= 25°C ) (V)
5
10
I
T(RMS)
(A)
15
20
100
I
GM
= 2 A
V
GT
(–40°C)
=2V
V
GM
= 10 V
P
GM
= 5 W
V
GT
(25°C)
= 1.5 V
P
G(AV)
= 500 mW
I
GT
(–40°C)
= 100 mA
I
GT
(25°C) = 30 mA
Proportional Change
of Typical
Trigger Voltage
versus
Junction Temperature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Quadrant I (T2+, G+),
Quadrant II (T2+, G–), and
Quadrant III (T2–, G–)
10
Gate Voltage
versus
Gate Current
V
G
(V)
1
0.1
10
100
V
GD
= 0.2 V
1000
I
G
(mA)
10 000
0
–60 –40 –20 0
20 40 60 80 100 120 140 160
T
J
(°C)
10
I
GT
(T
J
) (A) / I
GT
(T
J
= 25°C ) (A)
10
R
GREF
= 1 kΩ
I
X
(T
J
) (A) / I
X
(T
J
= 25°C ) (A)
Proportional Change
of Typical
Trigger Current
versus
Junction Temperature
Quadrant III (T2–, G–)
1
Proportional Change
of Typical
Holding Current
versus
Junction Temperature
I
X
= I
H
1
I
X
= I
L
Quadrant I (T2+, G+) and
Quadrant II (T2+, G–)
0.1
–60 –40 –20 0
20 40 60 80 100 120 140 160
T
J
(°C)
0.1
–60 –40 –20 0
20 40 60 80 100 120 140 160
T
J
(°C)
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
5
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