IC 64K X 4 STANDARD SRAM, 18 ns, CDIP28, SIDE BRAZED, CERAMIC, DIP-28, Static RAM
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | National Semiconductor(TI ) |
| package instruction | DIP, DIP28,.4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum access time | 18 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-CDIP-T28 |
| JESD-609 code | e0 |
| memory density | 262144 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Negative supply voltage rating | -4.5 V |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 28 |
| word count | 65536 words |
| character code | 64000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | |
| organize | 64KX4 |
| Exportable | NO |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP28,.4 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | -4.5 V |
| Certification status | Not Qualified |
| Maximum seat height | 4.191 mm |
| Maximum slew rate | 0.25 mA |
| surface mount | NO |
| technology | BICMOS |
| Temperature level | OTHER |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 10.16 mm |
| NM100504D18 | NM100504D15 | NM100504F15 | NM100504F18 | |
|---|---|---|---|---|
| Description | IC 64K X 4 STANDARD SRAM, 18 ns, CDIP28, SIDE BRAZED, CERAMIC, DIP-28, Static RAM | IC 64K X 4 STANDARD SRAM, 15 ns, CDIP28, SIDE BRAZED, CERAMIC, DIP-28, Static RAM | IC 64K X 4 STANDARD SRAM, 15 ns, CDFP28, 0.762 MM PITCH, CERPACK-28, Static RAM | IC 64K X 4 STANDARD SRAM, 18 ns, CDFP28, 0.762 MM PITCH, CERPACK-28, Static RAM |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) |
| package instruction | DIP, DIP28,.4 | DIP, DIP28,.4 | DFP, FL28,.5,30 | DFP, FL28,.5,30 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum access time | 18 ns | 15 ns | 15 ns | 18 ns |
| I/O type | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 code | R-CDIP-T28 | R-CDIP-T28 | R-GDFP-F28 | R-GDFP-F28 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| memory density | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 4 | 4 | 4 | 4 |
| Negative supply voltage rating | -4.5 V | -4.5 V | -4.5 V | -4.5 V |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 |
| Number of terminals | 28 | 28 | 28 | 28 |
| word count | 65536 words | 65536 words | 65536 words | 65536 words |
| character code | 64000 | 64000 | 64000 | 64000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C | 85 °C | 85 °C | 85 °C |
| organize | 64KX4 | 64KX4 | 64KX4 | 64KX4 |
| Exportable | NO | NO | NO | NO |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP | DIP | DFP | DFP |
| Encapsulate equivalent code | DIP28,.4 | DIP28,.4 | FL28,.5,30 | FL28,.5,30 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | FLATPACK | FLATPACK |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| power supply | -4.5 V | -4.5 V | -4.5 V | -4.5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum seat height | 4.191 mm | 4.191 mm | 2.286 mm | 2.286 mm |
| Maximum slew rate | 0.25 mA | 0.25 mA | 0.25 mA | 0.25 mA |
| surface mount | NO | NO | YES | YES |
| technology | BICMOS | BICMOS | BICMOS | BICMOS |
| Temperature level | OTHER | OTHER | OTHER | OTHER |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | FLAT | FLAT |
| Terminal pitch | 2.54 mm | 2.54 mm | 0.762 mm | 0.762 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| width | 10.16 mm | 10.16 mm | 10.69 mm | 10.69 mm |