NM24C02MN datasheet, PDF - EEWORLD Datasheet

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NM24C02MN: DescriptionIC 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, MINI, PLASTIC, DIP-8, Programmable ROM; Categorystorage storage; File Size583KB，11 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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NM24C02MN Overview

IC 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, MINI, PLASTIC, DIP-8, Programmable ROM

NM24C02MN Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	National Semiconductor（TI ）
package instruction	0.300 INCH, MINI, PLASTIC, DIP-8
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Other features	2 WIRE I2C INTERFACE; 16 BYTE PAGE WRITE; AUTOMATIC WRITE; DATA RETENTION > 40 YEARS
Maximum clock frequency (fCLK)	0.1 MHz
Data retention time - minimum	40
Durability	1000000 Write/Erase Cycles
I2C control byte	1010DDDR
JESD-30 code	R-PDIP-T8
JESD-609 code	e0
length	9.817 mm
memory density	2048 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	8
word count	256 words
character code	256
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256X8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP8,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	SERIAL
power supply	5 V
Certification status	Not Qualified
Maximum seat height	5.08 mm
Serial bus type	I2C
Maximum standby current	0.0001 A
Maximum slew rate	0.003 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	7.62 mm
Maximum write cycle time (tWC)	10 ms

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Description	IC 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, MINI, PLASTIC, DIP-8, Programmable ROM	IC 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14, 0.300 INCH, PLASTIC, SOP-14, Programmable ROM	IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14, 0.300 INCH, PLASTIC, SOP-14, Programmable ROM	IC 1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14, 0.300 INCH, PLASTIC, SOP-14, Programmable ROM	IC 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOP-8, Programmable ROM	THIS DRAWING IS A CONTROLLED DOCUMENT.	IC 2K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, MINI, PLASTIC, DIP-8, Programmable ROM	IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOP-8, Programmable ROM
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	-	incompatible	incompatible
package instruction	0.300 INCH, MINI, PLASTIC, DIP-8	SOP, SOP14,.4	SOP, SOP14,.4	SOP, SOP14,.4	0.150 INCH, PLASTIC, SOP-8	-	DIP, DIP8,.3	SOP, SOP8,.25
Reach Compliance Code	compliant	unknown	unknown	unknown	compliant	-	unknown	unknown
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	-	3A001.A.2.C	3A001.A.2.C
Other features	2 WIRE I2C INTERFACE; 16 BYTE PAGE WRITE; AUTOMATIC WRITE; DATA RETENTION > 40 YEARS	2 WIRE I2C INTERFACE; 16 BYTE PAGE WRITE; AUTOMATIC WRITE; DATA RETENTION > 40 YEARS	2 WIRE I2C INTERFACE; 16 BYTE PAGE WRITE; AUTOMATIC WRITE; DATA RETENTION > 40 YEARS	2 WIRE I2C INTERFACE; 16 BYTE PAGE WRITE; AUTOMATIC WRITE; DATA RETENTION > 40 YEARS	2 WIRE I2C INTERFACE; 16 BYTE PAGE WRITE; AUTOMATIC WRITE; DATA RETENTION > 40 YEARS	-	2 WIRE I2C INTERFACE; 16 BYTE PAGE WRITE; AUTOMATIC WRITE; DATA RETENTION > 40 YEARS	2 WIRE I2C INTERFACE; 16 BYTE PAGE WRITE; AUTOMATIC WRITE; DATA RETENTION > 40 YEARS
Maximum clock frequency (fCLK)	0.1 MHz	0.1 MHz	0.1 MHz	0.1 MHz	0.1 MHz	-	0.1 MHz	0.1 MHz
Data retention time - minimum	40	40	40	40	40	-	40	40
Durability	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	100000000 Write/Erase Cycles	1000000 Write/Erase Cycles	-	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles
I2C control byte	1010DDDR	1010DDDR	1010DDMR	1010DMMR	1010DDDR	-	1010MMMR	1010DDMR
JESD-30 code	R-PDIP-T8	R-PDSO-G14	R-PDSO-G14	R-PDSO-G14	R-PDSO-G8	-	R-PDIP-T8	R-PDSO-G8
JESD-609 code	e0	e0	e0	e0	e0	-	e0	e0
length	9.817 mm	9 mm	9 mm	9 mm	4.9 mm	-	9.817 mm	4.9 mm
memory density	2048 bit	2048 bit	4096 bit	8192 bit	2048 bit	-	16384 bit	4096 bit
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	-	EEPROM	EEPROM
memory width	8	8	8	8	8	-	8	8
Number of functions	1	1	1	1	1	-	1	1
Number of terminals	8	14	14	14	8	-	8	8
word count	256 words	256 words	512 words	1024 words	256 words	-	2048 words	512 words
character code	256	256	512	1000	256	-	2000	512
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	-	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-	-55 °C	-55 °C
organize	256X8	256X8	512X8	1KX8	256X8	-	2KX8	512X8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	SOP	SOP	SOP	SOP	-	DIP	SOP
Encapsulate equivalent code	DIP8,.3	SOP14,.4	SOP14,.4	SOP14,.4	SOP8,.25	-	DIP8,.3	SOP8,.25
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	IN-LINE	SMALL OUTLINE
Parallel/Serial	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	-	SERIAL	SERIAL
power supply	5 V	5 V	5 V	5 V	5 V	-	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
Maximum seat height	5.08 mm	2.65 mm	2.65 mm	2.65 mm	1.75 mm	-	5.08 mm	1.75 mm
Serial bus type	I2C	I2C	I2C	I2C	I2C	-	I2C	I2C
Maximum standby current	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A	-	0.0001 A	0.0001 A
Maximum slew rate	0.003 mA	0.003 mA	0.003 mA	0.003 mA	0.003 mA	-	0.003 mA	0.003 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	-	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	-	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	-	5 V	5 V
surface mount	NO	YES	YES	YES	YES	-	NO	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	-	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	-	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	-	THROUGH-HOLE	GULL WING
Terminal pitch	2.54 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	-	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	-	DUAL	DUAL
width	7.62 mm	7.5 mm	7.5 mm	7.5 mm	3.9 mm	-	7.62 mm	3.9 mm
Maximum write cycle time (tWC)	10 ms	10 ms	10 ms	10 ms	10 ms	-	10 ms	10 ms
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED

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