ZM-PTZ3.6B ~ ZM-PTZ36B
SILICON EPITAXIAL PLANAR ZENER DIODES
Features
1) Small surface mounting type
2) 1W of power can be obtained despite compact size
3) High surge withstand level
Applications
1) Voltage regulation and voltage limiting
2) Voltage surge absorption
LL-41
Absolute Maximum Ratings (T
a
= 25
o
C)
Symbol
Power Dissipation
1)
Junction Temperature
Storage Temperature Range
P
tot
T
j
T
S
Value
1
150
-55 to +150
Unit
W
O
O
C
C
1) Mounting density of other power components should be taken into consideration when laying out the pattern.
SEMTECH ELECTRONICS LTD.
( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 05/11/2003
ZM-PTZ3.6B ~ ZM-PTZ36B
Zener Voltage Range
TYPE
Min.
ZM-PTZ3.6B
ZM-PTZ3.9B
ZM-PTZ4.3B
ZM-PTZ4.7B
ZM-PTZ5.1B
ZM-PTZ5.6B
ZM-PTZ6.2B
ZM-PTZ6.8B
ZM-PTZ7.5B
ZM-PTZ8.2B
ZM-PTZ9.1B
ZM-PTZ10B
ZM-PTZ11B
ZM-PTZ12B
ZM-PTZ13B
ZM-PTZ15B
ZM-PTZ16B
ZM-PTZ18B
ZM-PTZ20B
ZM-PTZ22B
ZM-PTZ24B
ZM-PTZ27B
ZM-PTZ30B
ZM-PTZ33B
ZM-PTZ36B
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13.3
14.7
16.2
18
20
22
24
27
30
33
36
Operating Resistance
Zz (Ω)
I
Z
(mA)
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
20
10
10
10
10
10
10
Reverse current
I
R
(uA)
Max.
20
20
20
20
20
20
20
20
20
20
20
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Vz (V)
Max.
4
4.4
4.8
5.2
5.7
6.3
7
7.7
8.4
9.3
10.2
11.2
12.3
13.5
15
16.5
18.3
20.3
22.4
24.5
27.6
30.8
34
37
40
I
Z
(mA)
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
20
10
10
10
10
10
10
Max.
15
15
15
10
8
8
6
6
4
4
6
6
8
8
10
10
12
12
14
14
16
16
18
18
20
V
R
(V)
1
1
1
1
1
1.5
3
3.5
4
5
6
7
8
9
10
11
12
13
15
17
19
21
23
25
27
1) The Zener voltage is measured 40ms after power is supplied.
2)
The operating resistances (Z
Z
, Z
ZK
) are measured by superimposing a minute alternating current on the regulated
current (Iz).
SEMTECH ELECTRONICS LTD.
( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 05/11/2003
ZM-PTZ3.6B ~ ZM-PTZ36B
Derating curve
1200
Glass epoxy substrate
32x30x1.6(mm)
200
Rise in surface temperature
ALUMINA SUBSTRATE
114X124X1.6(mm)
200
Rise in surface temperature
Power dissipation
(mW)
Rise
in diode a surface
temperature
( C)
1.5W
Rise
in diode a surface
temperature
( C)
1.5W
1W
800
Ceramic substrate
82x30x1.0(mm)
100
1W
100
0.5W
400
Individual part
(not mounted)
0.5W
0
50
87.5 100
150
200
1
10
100
0
1
GLASS EPOXY SUBSTRATE
144X220X1.6(mm)
10
100
0
T
a
( C)
Mounting quantity(pcs/substrate)
Mounting quantity(pcs/substrate)
0.10
Zener voltage - temp.
coefficient characteristics
Iz=20mA
Iz=40mA
Zener voltage characteristics
100m
4.3 4.7 5.1
10m
3.9
3.6
5.6 6.2 6.8 7.5 8.2 9.1 10
12
11
13
15
16
18
20
22
Temperature coefficient ( %/ C)
0.08
24
27
30
33
36
0.04
Zener current,
(A)
125-25 C
0
1m
0
100
-0.04
10
-0.08
10
20
30
40
1
0
5
10
15
20
25
30
35
40
Zener voltage (V)
Zener voltage (V)
SEMTECH ELECTRONICS LTD.
( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 05/11/2003
京公网安备 11010802033920号
EEWORLD
