Transistors
DTA115TH / DTA115TE / DTA115TUA /
DTA115TKA / DTA115TSA
Digital transistors (built-in resistor)
DTA115TH / DTA115TE / DTA115TUA /
DTA115TKA / DTA115TSA
!
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
!
External dimensions
(Units : mm)
DTA115TH
1.6
0.85
0.27
(1)
0.5 0.5
(3)
(2)
0.12
0
~
0.1
0.7
1.0
1.6
ROHM : EMT3H
EIAJ : SC-89
(1)Emitter
(2)Base
(3)Collector
(1)
(2)
0.2
0.5 0.5
DTA115TE
0.3
(3)
0.8
0.15
0.55
0.1Min.
0~0.1
0.7
!
Circuit schematic
C
R
1
ROHM : EMT3
EIAJ : SC-75A
1.6
0.2
1.0
1.6
B
(1)Emitter
(2)Base
(3)Collector
E
(1)
DTA115TUA
E : Emitter
C : Collector
B : Base
0.3
(3)
0.65 0.65
0.7
1.25
2.1
0.15
0.2
(2)
1.3
0.9
Each lead has same dimensions
0.1~0.4
0~0.1
2.0
ROHM : UMT3
EIAJ : SC-70
(1)Emitter
(2)Base
(3)Collector
(1)
DTA115TKA
0.4
(3)
1.6
2.8
0.15
0.3
~
0.6
0
~
0.1
0.8
1.1
0.95 0.95
1.9
2.9
(2)
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1)Emitter
(2)Base
(3)Collector
DTA115TSA
3
4
2
(15Min.)
3Min.
0.45
Taping specifications
2.5
5
(1)(2)(3)
0.5 0.45
ROHM : SPT
EIAJ : SC-72
(1)Emitter
(2)Collector
(3)Base
Transistors
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DTA115TH / DTA115TE / DTA115TUA /
DTA115TKA / DTA115TSA
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−50
−50
−5
−100
150
200
300
150
−55
~
+150
°C
°C
mW
Unit
V
V
V
mA
DTA115TH / DTA115TE
Collector power
DTA115TUA / DTA115TKA
dissipation
DTA115TSA
Junction temperature
Storage temperature
!
Package, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTA115TH
EMT3H
99
T2L
8000
DTA115TE DTA115TUA DTA115TKA DTA115TSA
EMT3
99
TL
3000
UMT3
99
T106
3000
SMT3
99
T146
3000
SPT
−
TP
5000
!
Electrical characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Input resistance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
Min.
−50
−50
−5
−
−
−
100
70
−
Typ.
−
−
−
−
−
−
250
100
250
Max.
−
−
−
−0.5
−0.5
−0.3
600
130
−
Unit
V
V
V
µA
µA
V
−
kΩ
MH
Z
I
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−50V
V
EB
=−4V
Conditions
I
C
/I
B
=−1mA/−0.1mA
I
C
=−1mA
, V
CE
=−5V
−
V
CE
=−10V
, I
E
=5mA
, f=100MH
Z
∗
Transition frequency
∗Transition
frequency of the device.
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