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H11F1MTV

Description
FET Output Optocoupler
CategoryLED optoelectronic/LED    photoelectric   
File Size387KB,13 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

H11F1MTV Overview

FET Output Optocoupler

H11F1MTV Parametric

Parameter NameAttribute value
MakerON Semiconductor
Reach Compliance Codecompliant
Optoelectronic device typesFET OUTPUT OPTOCOUPLER
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
May 2012
H11F1M, H11F2M, H11F3M
Photo FET Optocouplers
Features
As a remote variable resistor:
100
Ω
to
300M
Ω
15pF shunt capacitance
100G
Ω
I/O isolation resistance
As an analog switch:
Extremely low offset voltage
60 V
pk-pk
signal capability
No charge injection or latch-up
UL recognized (File #E90700)
General Description
The H11FXM series consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled to a symmetrical
bilateral silicon photo-detector. The detector is electri-
cally isolated from the input and performs like an ideal
isolated FET designed for distortion-free control of low
level AC and DC analog signals. The H11FXM series
devices are mounted in dual in-line packages.
Applications
As a remote variable resistor:
Isolated variable attenuator
Automatic gain control
Active filter fine tuning/band switching
As an analog switch:
Isolated sample and hold circuit
Multiplexed, optically isolated A/D conversion
Schematic
ANODE 1
6
OUTPUT
TERM.
Package Outlines
CATHODE 2
5
3
4
OUTPUT
TERM.
©2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
www.fairchildsemi.com
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