SM-8 BIPOLAR TRANSISTOR H-BRIDGE
PRELIMINARY DATA SHEET ISSUE B JULY 1997
FEATURES
* Compact package
* Low on state losses
* Low drive requirements
* Operates up to 40V supply
* 2 Amp continuous rating
PARTMARKING DETAIL ZHB6790
ZHB6790
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
NPNs
50
40
5
6
2
PNPs
-50
-40
-5
-6
-2
UNIT
V
V
V
A
A
°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
SCHEMATIC DIAGRAM
E1, E4
CONNECTION DIAGRAM
C
1,
C
2
B1
Q1
Q4
C1, C2
C3, C4
B2
Q2
Q3
B3
B4
B
1
B
2
E
2
,E
3
B
3
5
E
1
,E
4
C
3
,C
4
B
4
6
7
E2, E3
8
1
2
3
4
ZHB6790
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
Derate above 25°C*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
Thermal Resistance - Junction to Ambient*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
SYMBOL
P
tot
VALUE
1.25
2
10
16
100
62.5
UNIT
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
100
80
60
D=1
t1
D=t1
tP
60
50
40
D=0.5
D=0.2
D=0.1
t1
D=t1
tP
tP
tP
40
20
0
100us
30
D=1
20
10
0
100us
1ms
10ms 100ms
1s
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
D=0.05
Single Pulse
1ms
10ms 100ms
Transient Thermal Resistance
Single Transistor "On"
2.0
10
Pulse Width
1s
10s
100s
Transient Thermal Resistance
Q1 and Q3 or Q2 and Q4 "On"
Pulse Width
10s
100s
1.5
1
Dual T
ransistors
Single Transistor
1.0
0.5
0
Full Copper
Minimum
Copper
Dual T
ransistors
Single Transistor
0.1
0
20
40
T - Temperature (°C)
60
80
100
120
140 160
0.1
Derating curve
Pd v Pcb Area Comparison
Pcb Area (inches squared)
1
10
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs
rurned on.
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