SM-8 DUAL PNP MEDIUM POWER
TRANSISTORS
ZDT749
ISSUE 1 - NOVEMBER 1995
C
1
B
1
E
1
B
2
E
2
C
1
C
2
C
2
PARTMARKING DETAIL T749
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
T
j
:T
stg
VALUE
-35
-25
-5
-6
-2
-55 to +150
UNIT
V
V
V
A
A
°C
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single die on
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
SYMBOL
P
tot
VALUE
2.25
2.75
18
22
55.6
45.5
UNIT
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 351
ZDT749
TYPICAL CHARACTERISTICS
td
tr
ZDT749
1.8
tf
ns
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
UNIT
1.6
160
ts
140
ns
1200
120
ts
I
B1
=I
B2
=I
C
/10
V
CE
=-10V
PARAMETER
V
I
C
=-100
µ
A, I
E
=0
1.2
1.0
1000
tf
100
SYMBOL MIN.
1.4
TYP.
MAX.
CONDITIONS.
Collector-Base
Breakdown Voltage
Switching time
V
(BR)CBO
V
0.6
600
60
-35
I
C
=-10mA, I
B
=0*
I
C
/I
B
=100
40
Collector-Emitter
Breakdown Voltage
0.4
V
(BR)CEO
V
-25
V
0.2
200
20
- (Volts)
0.8
80
tr
td
V
(BR)EBO
I
E
=-100
µ
A, I
C
=0
I
C
/I
B
=10
0
Emitter-Base
Breakdown Voltage
0
0.001
0.01
1
10
0.1
0.01
-5
µ
A
µ
A
I
C
-
Collector Current (Amps)
0.1
1
Collector Cutoff
Current
µ
A
I
CBO
V
EB
=-4V, I
E
=0
I
C
=1A, I
B
=-100mA*
I
C
=2A, I
B
=-200mA*
I
C
=1A, I
B
=-100mA*
200
-0.1
-10
V
CE(sat)
v I
C
V
CB
=-30V
V
CB
=-30V,
T
amb
=100°C
I
C
-
Collector Current (Amps)
Emitter Cutoff Current
V
V
V
V
120
I
EBO
-0.1
Switching Speeds
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.12
-0.23
-0.3
-0.5
1.2
Base-Emitter
Saturation Voltage
I
C
=-1A, V
CE
=-2V*
h
80
V
BE(sat)
- Gain
160
V
CE
=2V
-0.9
-1.25
1.0
0.8
I
C
/I
B
=10
Base-Emitter
Turn-On Voltage
- (Volts)
V
BE(on)
-0.8
-1
0.6
I
C
/I
B
=100
Static Forward Current
Transfer Ratio
40
h
FE
V
0.001
300
0.4
70
100
75
15
MHz
pF
ns
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
- (Volts)
200
200
150
50
I
C
=-100mA, V
CE
=-5V
f=100MHz
V
CB
=-10V f=1MHz
1.2
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
0.01
0.1
1
10
0.001
0.01
0.1
1
10
Transition Frequency
f
T
100
160
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
Output Capacitance
C
obo
55
100
Switching Times
t
on
40
1.0
V
CE
=2V
0.8
t
off
450
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
V
0.6
0.4
0.001
0.01
0.1
10
1
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
3 - 352
3 - 353
ZDT749
TYPICAL CHARACTERISTICS
td
tr
ZDT749
1.8
tf
ns
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
UNIT
1.6
160
ts
140
ns
1200
120
ts
I
B1
=I
B2
=I
C
/10
V
CE
=-10V
PARAMETER
V
I
C
=-100
µ
A, I
E
=0
1.2
1.0
1000
tf
100
SYMBOL MIN.
1.4
TYP.
MAX.
CONDITIONS.
Collector-Base
Breakdown Voltage
Switching time
V
(BR)CBO
V
0.6
600
60
-35
I
C
=-10mA, I
B
=0*
I
C
/I
B
=100
40
Collector-Emitter
Breakdown Voltage
0.4
V
(BR)CEO
V
-25
V
0.2
200
20
- (Volts)
0.8
80
tr
td
V
(BR)EBO
I
E
=-100
µ
A, I
C
=0
I
C
/I
B
=10
0
Emitter-Base
Breakdown Voltage
0
0.001
0.01
1
10
0.1
0.01
-5
µ
A
µ
A
I
C
-
Collector Current (Amps)
0.1
1
Collector Cutoff
Current
µ
A
I
CBO
V
EB
=-4V, I
E
=0
I
C
=1A, I
B
=-100mA*
I
C
=2A, I
B
=-200mA*
I
C
=1A, I
B
=-100mA*
200
-0.1
-10
V
CE(sat)
v I
C
V
CB
=-30V
V
CB
=-30V,
T
amb
=100°C
I
C
-
Collector Current (Amps)
Emitter Cutoff Current
V
V
V
V
120
I
EBO
-0.1
Switching Speeds
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.12
-0.23
-0.3
-0.5
1.2
Base-Emitter
Saturation Voltage
I
C
=-1A, V
CE
=-2V*
h
80
V
BE(sat)
- Gain
160
V
CE
=2V
-0.9
-1.25
1.0
0.8
I
C
/I
B
=10
Base-Emitter
Turn-On Voltage
- (Volts)
V
BE(on)
-0.8
-1
0.6
I
C
/I
B
=100
Static Forward Current
Transfer Ratio
40
h
FE
V
0.001
300
0.4
70
100
75
15
MHz
pF
ns
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
- (Volts)
200
200
150
50
I
C
=-100mA, V
CE
=-5V
f=100MHz
V
CB
=-10V f=1MHz
1.2
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
0.01
0.1
1
10
0.001
0.01
0.1
1
10
Transition Frequency
f
T
100
160
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
Output Capacitance
C
obo
55
100
Switching Times
t
on
40
1.0
V
CE
=2V
0.8
t
off
450
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
V
0.6
0.4
0.001
0.01
0.1
10
1
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
3 - 352
3 - 353
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