SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ZDT690
ISSUE 1 - NOVEMBER 1995
C
1
B
1
E
1
B
2
E
2
C
1
C
2
C
2
PARTMARKING DETAIL T690
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
T
j
:T
stg
VALUE
45
45
5
6
2
-55 to +150
UNIT
V
V
V
A
A
°C
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single die on
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
SYMBOL
P
tot
VALUE
2.25
2.75
18
22
55.6
45.5
UNIT
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 339
ZDT690
TYPICAL CHARACTERISTICS
CONDITIONS.
I
C
/I
B
=200
0.8
I
C
/I
B
=10
0.8
I
C
/I
B
=100
T
amb
=25°C
ZDT690
MAX. UNIT
V
I
C
=100
µ
A
- (Volts)
-55°C
+25°C
+100°C
+175°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V
0.4
0.4
V
(BR)CBO
I
C
=10mA*
V
- (Volts)
0.6
0.6
45
I
C
/I
B
=100
Collector-Emitter
Breakdown Voltage
V
I
E
=100
µ
A
0.2
0.2
0
0.01
0.1
1
10
V
(BR)CEO
V
0
45
Emitter-Base Breakdown
Voltage
0.1
µ
A
µ
A
V
(BR)EBO
V
CB
=35V
V
EB
=4V
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1K
V
CE
=2V
1.5K
1.6
1.4
1.2
1.0
0.8
500
0.6
5
Collector Cutoff Current
0.1
0.1
0.5
0.9
0.9
I
C
=100mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
h
I
+
-
Collector Current (Amps)
I
CBO
0.01
0.1
1
10
Emitter Cutoff Current
V
V
V
V
I
C
=1A, V
CE
=2V*
+100°C
+25°C
-55°C
I
EBO
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
Collector-Emitter Saturation V
CE(sat)
Voltage
V
CE(sat)
v I
C
Base-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Turn-On Voltage
V
BE(on)
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=100
- Typical Gain
Static Forward Current
Transfer Ratio
MHz
0
0
500
400
150
I
C
=50mA, V
CE
=5V
f=50MHz
V
EB
=0.5V, f=1MHz
V
CB
=10V, f=1MHz
I
C
=500mA, I
B!
=50mA
I
B2
=50mA, V
CC
=10V
- Normalised Gain
V
h
0.01
0.1
1
10
- (Volts)
h
FE
Transition Frequency
pF
pF
ns
ns
f
T
150
0.4
0.2
Input Capacitance
C
ibo
200
0
0.01
0.1
1
10
Output Capacitance
C
obo
16
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
Switching Times
t
on
t
off
33
1300
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
V
CE
=2V
1.6
1.4
1.2
1.0
0.8
-55°C
+25°C
+100°C
+175°C
V
- (Volts)
0.6
0.4
0.2
0
0
0.01
0.1
1
10
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
3 - 340
3 - 341
ZDT690
TYPICAL CHARACTERISTICS
CONDITIONS.
I
C
/I
B
=200
0.8
I
C
/I
B
=10
0.8
I
C
/I
B
=100
T
amb
=25°C
ZDT690
MAX. UNIT
V
I
C
=100
µ
A
- (Volts)
-55°C
+25°C
+100°C
+175°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V
0.4
0.4
V
(BR)CBO
I
C
=10mA*
V
- (Volts)
0.6
0.6
45
I
C
/I
B
=100
Collector-Emitter
Breakdown Voltage
V
I
E
=100
µ
A
0.2
0.2
0
0.01
0.1
1
10
V
(BR)CEO
V
0
45
Emitter-Base Breakdown
Voltage
0.1
µ
A
µ
A
V
(BR)EBO
V
CB
=35V
V
EB
=4V
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1K
V
CE
=2V
1.5K
1.6
1.4
1.2
1.0
0.8
500
0.6
5
Collector Cutoff Current
0.1
0.1
0.5
0.9
0.9
I
C
=100mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
h
I
+
-
Collector Current (Amps)
I
CBO
0.01
0.1
1
10
Emitter Cutoff Current
V
V
V
V
I
C
=1A, V
CE
=2V*
+100°C
+25°C
-55°C
I
EBO
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
Collector-Emitter Saturation V
CE(sat)
Voltage
V
CE(sat)
v I
C
Base-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Turn-On Voltage
V
BE(on)
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=100
- Typical Gain
Static Forward Current
Transfer Ratio
MHz
0
0
500
400
150
I
C
=50mA, V
CE
=5V
f=50MHz
V
EB
=0.5V, f=1MHz
V
CB
=10V, f=1MHz
I
C
=500mA, I
B!
=50mA
I
B2
=50mA, V
CC
=10V
- Normalised Gain
V
h
0.01
0.1
1
10
- (Volts)
h
FE
Transition Frequency
pF
pF
ns
ns
f
T
150
0.4
0.2
Input Capacitance
C
ibo
200
0
0.01
0.1
1
10
Output Capacitance
C
obo
16
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
Switching Times
t
on
t
off
33
1300
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
V
CE
=2V
1.6
1.4
1.2
1.0
0.8
-55°C
+25°C
+100°C
+175°C
V
- (Volts)
0.6
0.4
0.2
0
0
0.01
0.1
1
10
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
3 - 340
3 - 341
Analog electronics
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