SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ZDT694
ZDT694
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
VALUE
120
120
5
1
0.5
-55 to +150
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
°C
Base-Emitter
Saturation Voltage
A
V
BE(sat)
V
BE(on)
h
FE
500
400
150
f
T
C
ibo
C
obo
t
on
t
off
130
200
9
80
2900
MHz
pF
pF
ns
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
A
Collector-Emitter Saturation V
CE(sat)
Voltage
V
V
Emitter Cutoff Current
I
EBO
V
Collector Cutoff Current
I
CBO
UNIT
V
(BR)EBO
5
0.1
0.1
0.25
0.5
0.9
0.9
V
(BR)CEO
120
V
V
µ
A
µ
A
ISSUE 1 - NOVEMBER 1995
C
1
SYMBOL
V
(BR)CBO
120
V
MIN.
TYP.
MAX. UNIT
B
1
C
1
E
1
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=100V
V
EB
=4V
C
2
B
2
C
2
SM-8
(8 LEAD SOT223)
E
2
PARTMARKING DETAIL T694
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
V
CBO
Collector-Emitter Voltage
V
CEO
Emitter-Base Voltage
V
EBO
Peak Pulse Current
I
CM
V
V
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=0.4A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, V
CE
=2V*
I
C
=100mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=400mA, V
CE
=2V*
I
C
=50mA, V
CE
=5V
f=50MHz
V
EB
=0.5V, f=1MHz
V
CB
=10V, f=1MHz
I
C
=100mA, I
B1
=10mA
I
B2
=10mA, V
CC
=50V
Continuous Collector Current
I
C
Operating and Storage Temperature Range
T
j
:T
stg
THERMAL CHARACTERISTICS
VALUE
2.25
2.75
18
22
55.6
45.5
°C/ W
°C/ W
mW/ °C
mW/ °C
W
W
UNIT
PARAMETER
SYMBOL
Total Power Dissipation at T
amb
= 25°C*
Any single die on
Both die on equally
P
tot
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 342
3 - 343
SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ZDT694
ZDT694
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
VALUE
120
120
5
1
0.5
-55 to +150
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
°C
Base-Emitter
Saturation Voltage
A
V
BE(sat)
V
BE(on)
h
FE
500
400
150
f
T
C
ibo
C
obo
t
on
t
off
130
200
9
80
2900
MHz
pF
pF
ns
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
A
Collector-Emitter Saturation V
CE(sat)
Voltage
V
V
Emitter Cutoff Current
I
EBO
V
Collector Cutoff Current
I
CBO
UNIT
V
(BR)EBO
5
0.1
0.1
0.25
0.5
0.9
0.9
V
(BR)CEO
120
V
V
µ
A
µ
A
ISSUE 1 - NOVEMBER 1995
C
1
SYMBOL
V
(BR)CBO
120
V
MIN.
TYP.
MAX. UNIT
B
1
C
1
E
1
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=100V
V
EB
=4V
C
2
B
2
C
2
SM-8
(8 LEAD SOT223)
E
2
PARTMARKING DETAIL T694
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
V
CBO
Collector-Emitter Voltage
V
CEO
Emitter-Base Voltage
V
EBO
Peak Pulse Current
I
CM
V
V
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=0.4A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, V
CE
=2V*
I
C
=100mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=400mA, V
CE
=2V*
I
C
=50mA, V
CE
=5V
f=50MHz
V
EB
=0.5V, f=1MHz
V
CB
=10V, f=1MHz
I
C
=100mA, I
B1
=10mA
I
B2
=10mA, V
CC
=50V
Continuous Collector Current
I
C
Operating and Storage Temperature Range
T
j
:T
stg
THERMAL CHARACTERISTICS
VALUE
2.25
2.75
18
22
55.6
45.5
°C/ W
°C/ W
mW/ °C
mW/ °C
W
W
UNIT
PARAMETER
SYMBOL
Total Power Dissipation at T
amb
= 25°C*
Any single die on
Both die on equally
P
tot
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 342
3 - 343
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