SM-8 DUAL PNP MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - AUGUST 1997
ZDT1147
C
1
C
1
C
2
C
2
PARTMARKING DETAIL – ZDT1147
B
1
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
T
j
:T
stg
VALUE
-15
-12
-5
-20
-5
-500
-55 to +150
UNIT
V
V
V
A
A
mA
°C
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single die “on”
Both die “on” equally
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
SYMBOL
P
tot
2.0
2.75
18
22
55.6
45.5
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
VALUE
UNIT
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT1147
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
-15
TYP.
-35
MAX.
UNIT
V
CONDITIONS.
I
C
=-100µA
Collector-Base Breakdown V
(BR)CBO
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff
Current
Collector-Emitter
Saturation Voltage
V
CES
-12
-25
V
I
C
=-100µA
I
C
=-10mA
V
CEO
-12
-25
V
V
CEV
-12
-25
V
I
C
=-100µA, V
EB
=+1V
V
(BR)EBO
-5
-8.5
V
I
E
=-100µA
V
CB
=-12V
V
EB
=-4V
V
CES
=-10V
I
CBO
I
EBO
I
CES
-0.3
-0.3
-0.3
-100
-100
-100
nA
nA
nA
V
CE(sat)
-25
-70
-90
-115
-250
-950
-50
-110
-130
-170
-380
-1050
mV
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-1mA*
I
C
=-0.5A, I
B
=-2.5mA*
I
C
=-1A, I
B
=-6mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-5A, I
B
=-50mA*
I
C
=-5A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
-905
-1000
mV
I
C
=-5A, V
CE
=-2V*
h
FE
270
250
200
150
90
450
400
340
250
160
60
115
850
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
I
C
=-20A, V
CE
=-2V*
MHz
I
C
=-50mA, V
CE
=-10V
f=50MHz
V
CB
=-10V, f=1MHz
I
C
=-4A, I
B
=-40mA, V
CC
=-10V
I
C
=-4A, I
B
=±40mA,
V
CC
=-10V
Transition Frequency
f
T
Output Capacitance
C
CB
t
on
80
150
220
pF
ns
ns
Switching Times
t
off
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
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