ZC2812E datasheet, PDF - EEWORLD Datasheet

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ZC2812E: DescriptionSILICON, MIXER DIODE; CategoryDiscrete semiconductor diode; File Size35KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZC2812E Overview

SILICON, MIXER DIODE

ZC2812E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Minimum breakdown voltage	15 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum diode capacitance	1.2 pF
Diode component materials	SILICON
Diode type	MIXER DIODE
Maximum forward voltage (VF)	0.41 V
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.02 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.33 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	15 V
Maximum reverse current	0.1 µA
surface mount	YES
technology	SCHOTTKY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL

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SOT23 DUAL SCHOTTKY

BARRIER DIODES

ISSUE 3 - NOVEMBER 1995

7

1

ZC2812E

ZC2813E

1

3

2

3

2

ZC2813E

Common Anode

13E

ZC2812E

Series

12E

SOT23

Device

Type

Part Marking

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Power Dissipation at T

amb

= 25°C

Operating and Storage Temperature Range

SYMBOL

P

tot

T

j

:T

stg

VALUE

330

-55 to +150

UNIT

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Breakdown Voltage

Reverse Leakage Current

Forward Voltage

Forward Current

Capacitance

Effective Minority Lifetime (1)

SYMBOL MIN.

V

BR

I

R

V

F

I

F

C

T

τ

TYP.

15

MAX. UNIT

V

100

410

20

1.2

100

nA

mV

mA

pF

ps

CONDITIONS.

I

R

=10

µ

A

V

R

=10V

I

F

=1mA

V

F

=1V

V

R

=0 V, f=1MHz

f= 54 MHz, I

pk

=20mA

(1) Sample Test.

For typical characteristics graphs see ZC2811E datasheet.

3 - 315

ZC2812E Related Products

	ZC2812E	ZC2813E
Description	SILICON, MIXER DIODE	SILICON, MIXER DIODE
Is it Rohs certified?	incompatible	incompatible
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	R-PDSO-G3	R-PDSO-G3
Reach Compliance Code	unknow	unknown
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Minimum breakdown voltage	15 V	15 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
Maximum diode capacitance	1.2 pF	1.2 pF
Diode component materials	SILICON	SILICON
Diode type	MIXER DIODE	MIXER DIODE
Maximum forward voltage (VF)	0.41 V	0.41 V
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0
Humidity sensitivity level	1	1
Number of components	2	2
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C
Maximum output current	0.02 A	0.02 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Maximum power dissipation	0.33 W	0.33 W
Certification status	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	15 V	15 V
Maximum reverse current	0.1 µA	0.1 µA
surface mount	YES	YES
technology	SCHOTTKY	SCHOTTKY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL

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