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BZX84C9V1GS08

Description
9.1V, 0.35W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SOT-23, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size101KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BZX84C9V1GS08 Overview

9.1V, 0.35W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SOT-23, 3 PIN

BZX84C9V1GS08 Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.35 W
Certification statusNot Qualified
Nominal reference voltage9.1 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum voltage tolerance5%
Working test current5 mA
BZX84C2V7–BZX84C51
Vishay Telefunken
350 mW Surface Mount Zener Diodes
Features
D
D
D
D
Planar die construction
350 mW Power dissipation
Zener voltages from 2.7V – 51V
Ideally suited for automated assembly processes
94 8550
Order Instruction
Type
BZX84C2V7
Ordering Code
BZX84C2V7–GS08
Remarks
Tape and Reel
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Zener current (see figures 1–3 below)
Junction and storage temperature range
Test Conditions
on ceramic substrate
10 mmx8 mmx0.7 mm
Type
Symbol
P
d
T
j
=T
stg
Value
350
–55...+150
Unit
mW
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on ceramic substrate 10 mmx8 mmx0.7 mm
Symbol
R
thJA
Value
420
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward Voltage
Test Conditions
I
F
=10 mA
Type
Symbol
V
F
Min
Typ
Max
0.9
Unit
V
Document Number 85606
Rev. A2, 12-Mar-01
www.vishay.com
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