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P095RH10DG0

Description
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1KV V(DRM),175A I(T),TO-208VAR1/2
CategoryAnalog mixed-signal IC    Trigger device   
File Size414KB,6 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

P095RH10DG0 Overview

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1KV V(DRM),175A I(T),TO-208VAR1/2

P095RH10DG0 Parametric

Parameter NameAttribute value
MakerIXYS
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time35 µs
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
Maximum leakage current20 mA
On-state non-repetitive peak current1800 A
Maximum on-state current175000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage1000 V
surface mountNO
Trigger device typeSCR
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