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BYD37KT/R

Description
DIODE 0.6 A, 800 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, 100H03, 2 PIN, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size71KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYD37KT/R Overview

DIODE 0.6 A, 800 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, 100H03, 2 PIN, Signal Diode

BYD37KT/R Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.6 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.3 µs
surface mountYES
technologyAVALANCHE
Terminal formWRAP AROUND
Terminal locationEND
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BYD37 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Jun 05
1999 Nov 16
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