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BYG50J/T3

Description
600V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, PMOS, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size36KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYG50J/T3 Overview

600V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, PMOS, 2 PIN

BYG50J/T3 Parametric

Parameter NameAttribute value
MakerNXP
Parts packaging codeDO-214AC
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
GuidelineIEC-134
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time2 µs
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D168
BYG50 series
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Preliminary specification
1996 May 24
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