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NE3210S01-T1B

Description
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, SO1, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size743KB,15 Pages
ManufacturerCalifornia Eastern Labs
Websitehttp://www.cel.com/
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NE3210S01-T1B Overview

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, SO1, 4 PIN

NE3210S01-T1B Parametric

Parameter NameAttribute value
MakerCalifornia Eastern Labs
package instructionDISK BUTTON, O-PRDB-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage3 V
Maximum drain current (ID)0.015 A
FET technologyHETERO-JUNCTION
highest frequency bandX BAND
JESD-30 codeO-PRDB-G4
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)12 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationRADIAL
Transistor component materialsSILICON
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
X to Ku BAND SUPER LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
• Gate Length: Lg
0.20
µ
m
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
• Gate Width : Wg = 160
µ
m
ORDERING INFORMATION (PLAN)
Part Number
NE3210S01-T1
Supplying Form
ON
Re
p
Parameter
I
D
I
G
P
tot
T
ch
T
stg
en
t:
Ratings
4.0
–3.0
IDSS
100
165
125
–65 to +125
MIN.
1
5
TYP.
2
10
TI
Tape & reel 1 000 pcs./reel
Tape & reel 4 000 pcs./reel
NE3210S01-T1B
Remark
For sample order, please contact your
nearby
sales office. (Part number for sample order: NE3210S01-A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Symbol
V
DS
lac
em
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
SC
ro
p
Total Power Dissipation
Channel Temperature
Storage Temperature
-In
DI
D
RECOMMENDED OPERATING CONDITIONS (T
A
= +25°C)
Characteristics
Symbol
V
DS
I
D
P
in
MAX.
3
15
0
Unit
V
mA
dBm
Drain to Source Voltage
Drain Current
Input Power
Document No. P14067EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
The mark
NU
CE
E
35
D
12
K
Marking
K
Unit
V
V
mA
V
GS
NE3210S01
µ
A
mW
°C
°C
shows major revised points.
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