RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | NEC Electronics |
| package instruction | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | compliant |
| Other features | LOW NOISE, HIGH RELIABILITY |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 4 V |
| FET technology | HETERO-JUNCTION |
| highest frequency band | S BAND |
| JESD-30 code | R-PDSO-G4 |
| JESD-609 code | e6 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | DEPLETION MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Minimum power gain (Gp) | 14 dB |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN BISMUTH |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE |
| NE34018-TI-63-A | NE34018-TI-64-A | |
|---|---|---|
| Description | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, |
| Is it Rohs certified? | conform to | conform to |
| Maker | NEC Electronics | NEC Electronics |
| Reach Compliance Code | compliant | compliant |
| Other features | LOW NOISE, HIGH RELIABILITY | LOW NOISE, HIGH RELIABILITY |
| Configuration | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 4 V | 4 V |
| FET technology | HETERO-JUNCTION | HETERO-JUNCTION |
| highest frequency band | S BAND | S BAND |
| JESD-30 code | R-PDSO-G4 | R-PDSO-G4 |
| JESD-609 code | e6 | e6 |
| Number of components | 1 | 1 |
| Number of terminals | 4 | 4 |
| Operating mode | DEPLETION MODE | DEPLETION MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | 260 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Minimum power gain (Gp) | 14 dB | 14 dB |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | TIN BISMUTH | TIN BISMUTH |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | 10 |
| transistor applications | AMPLIFIER | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
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