DATA SHEET
GaAs HETEROJUNCTION BIPOLAR TRANSISTOR
NE52418
L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER
NPN GaAs HBT
DESCRIPTION
The NE52418 is an NPN GaAs HBT (Heterojunction Bipolar Transistor) developed for L to S band mobile
communication equipment.
FEATURES
• Ideal for low noise and high gain amplifiers
NF = 0.95 dB TYP., G
a
= 17 dB TYP. (@ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz, Z
S
= Z
L
= 50
Ω)
IIP
3
= +8 dBm TYP. (@ V
CE
= 2.5 V, I
C
= 8 mA, f = 2 GHz, 1 tone, Z
S
= Z
L
= Z
opt
)
• 4-pin super minimold package employed (SOT-343 style)
• Grounded emitter transistor
APPLICATIONS
• Mobile communication terminals and other L to S band microwave communication applications
ORDERING INFORMATION
Part Number
NE52418-T1
Package
4-pin super minimold
Marking
V45
Supplying Form
•
8 mm wide embossed taping
•
Pin 3 (Emitter), Pin 4 (Collector) face the perforation side of the tape
•
Qty 3 kpcs/reel
Remark
To order evaluation samples, consult your NEC sales representative.
Part number for sample order: NE52418
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15641EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
©
2001
NE52418
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Ratings
5.0
3.0
3.0
40
0.3
150
+125
−65
to +125
Unit
V
V
V
mA
mA
mW
°C
°C
RECOMMENDED OPERATING CONDITIONS (T
A
= +25°C)
°
Parameter
Collector to Emitter Voltage
Collector Current
Input Power
Symbol
V
CE
I
C
P
in
MIN.
1.5
−
−
TYP.
2.0
3
−
MAX.
3.0
10
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
Parameter
Emitter to Base Leak Current
Collector to Base Leak Current
DC Current Gain
Noise Figure
Associated Gain
3rd Order Intermodulation Distortion
Input Intercept Point
Symbol
I
EBO
I
CBO
h
FE
NF
G
a
IIP
3
V
EBO
= 3 V
V
CBO
= 3 V
V
CE
= 2 V, I
C
= 3 mA
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
L
= 50
Ω
V
CE
= 2.5 V, I
C
= 8 mA, f = 2 GHz,
1 tone, Z
S
= Z
L
= Z
opt
Test Conditions
MIN.
−
−
110
−
15
−
TYP.
0.2
0.2
150
0.95
17
+8
MAX.
1.0
1.0
190
1.35
−
−
Unit
µ
A
µ
A
−
dB
dB
dBm
2
Data Sheet P15641EJ1V0DS
NE52418
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
DC CHARACTERISTICS
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
10
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
Total Power Dissipation P
tot
(mW)
150
Collector Current I
C
(mA)
100
200
8
6
100
4
50
2
0
25
50
75
125
150
0
0.5
1.0
1.5
Ambient Temperature T
A
(˚C)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
10
60
µ
A
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
Collector Current I
C
(mA)
8
DC Current Gain h
FE
5
50
µ
A
40
µ
A
30
µ
A
20
µ
A
I
B
= 10
µ
A
100
6
4
10
2
0
1
2
3
4
1
0.1
1
Collector Current I
C
(mA)
10
Collector to Emitter Voltage V
CE
(V)
NOISE CHARACTERISTICS
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
5
f = 2 GHz, V
CE
= 2 V
Z
S
= Z
L
= 50
Ω
G
a
30
25
20
15
10
5
0
100
4
3
2
1
0
NF
1
10
Collector Current I
C
(mA)
Associated Gain G
a
(dB)
Noise Figure NF (dB)
Data Sheet P15641EJ1V0DS
3
NE52418
GAIN CHARACTERISTICS
INSERTION POWER GAIN, MAXIMUM
AVAILABLE POWER GAIN, MAXIMUM
STABLE POWER GAIN vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
MSG
20
15
10
5
0
0.1
1
Frequency f (GHz)
|S
21e
|
2
V
CE
= 2 V
I
C
= 3 mA
MAG
10
Remark
The graphs indicate nominal characteristics.
4
Data Sheet P15641EJ1V0DS
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