INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 300V(Min)- 2N6771
= 350V(Min)- 2N6772
= 400V(Min)- 2N6773
·High
Switching Speed
·Low
Saturation Voltage
APPLICATIONS
·Designed
for use in off-line power supplies and is also well
suited for use in a wide range of inverter or converter circuits
and pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
2N6771
V
CEV
Collector-Emitter Voltage
V
BE
= -1.5V
2N6772
2N6773
2N6771
V
CEO(SUS)
Collector-Emitter Voltage
2N6772
2N6773
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
450
550
650
300
350
400
8
8
10
4
150
200
-65~200
V
A
A
A
W
℃
℃
V
V
UNIT
2N6771/6772/6773
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.17
UNIT
℃/W
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6771
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
2N6772
2N6773
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
2N6771
I
CEV
Collector
Cutoff Current
2N6772
2N6773
I
EBO
h
FE
C
OB
f
T
Emitter Cutoff Current
DC Current Gain
Output Capacitance
Current-Gain—Bandwidth Product
I
C
= 5A; I
B
= 1A
I
C
= 5A; I
B
= 1A,T
C
= 125℃
I
C
= 8A; I
B
= 4A
I
C
= 5A; I
B
= 1A
I
C
= 200mA ; I
B
= 0
CONDITIONS
2N6771/6772/6773
MIN
300
350
400
TYP.
MAX
UNIT
V
1.0
2.0
2.0
1.6
0.1
1.0
0.1
1.0
0.1
1.0
2.0
10
50
15
40
300
60
V
V
V
V
CE
= 450V;V
BE
= -1.5V
V
CE
= 450V;V
BE
= -1.5V,T
C
= 125℃
V
CE
= 550V;V
BE
= -1.5V
V
CE
= 550V;V
BE
= -1.5V,T
C
= 125℃
V
CE
= 650V;V
BE
= -1.5V
V
CE
= 650V;V
BE
= -1.5V,T
C
= 125℃
V
EB
= 8V; I
C
=0
I
C
= 5A ; V
CE
= 3V
I
E
= 0;V
CB
= 10V; f
test
=1MHz
I
C
= 0.2A ;V
CE
= 10V
mA
mA
pF
MHz
Switching Times
t
d
t
r
t
stg
t
f
Delay Time
Rise Time
I
C
= 5A; I
B1
= -I
B2
= 1A
Storage Time
Fall Time
2.5
0.4
μs
μs
0.1
0.5
μs
μs
isc website：www.iscsemi.cn
2
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