NDC651N/S62Z datasheet, PDF - EEWORLD Datasheet

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Datasheet> All Categories > Discrete semiconductor> The transistor> NDC651N/S62Z

NDC651N/S62Z: Description3200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; CategoryDiscrete semiconductor The transistor; File Size181KB，6 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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NDC651N/S62Z Overview

3200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

NDC651N/S62Z Parametric

Parameter Name	Attribute value
Maker	Texas Instruments
package instruction	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	3.2 A
Maximum drain-source on-resistance	0.06 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6
Number of components	1
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	0.8 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

NDC651N/S62Z Related Products

	NDC651N/S62Z	NDC651N	NDC651N/L99Z	NDC651N/D87Z
Description	3200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	3200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	3200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	3200mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Maker	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V
Maximum drain current (ID)	3.2 A	3.2 A	3.2 A	3.2 A
Maximum drain-source on-resistance	0.06 Ω	0.06 Ω	0.06 Ω	0.06 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
Number of components	1	1	1	1
Number of terminals	6	6	6	6
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	0.8 W	0.8 W	0.8 W	0.8 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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