EEWORLDEEWORLDEEWORLD

Part Number

Search

MRFIC1501R2

Description
Wide Band Low Power Amplifier, 1000MHz Min, 2000MHz Max, GAAS, PLASTIC, SO-8
CategoryWireless rf/communication    Radio frequency and microwave   
File Size170KB,8 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

MRFIC1501R2 Overview

Wide Band Low Power Amplifier, 1000MHz Min, 2000MHz Max, GAAS, PLASTIC, SO-8

MRFIC1501R2 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionSOP8,.25
Reach Compliance Codeunknown
Characteristic impedance50 Ω
structureCOMPONENT
Gain17 dB
Maximum input power (CW)3 dBm
JESD-609 codee0
Installation featuresSURFACE MOUNT
Number of terminals8
Maximum operating frequency2000 MHz
Minimum operating frequency1000 MHz
Maximum operating temperature100 °C
Minimum operating temperature-30 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeSOP8,.25
power supply5 V
RF/Microwave Device TypesWIDE BAND LOW POWER
Maximum slew rate7.5 mA
surface mountYES
technologyGAAS
Terminal surfaceTin/Lead (Sn/Pb)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRFIC1501/D
The MRFIC Line
GPS GaAs Low Noise Amplifier
The MRFIC1501 is a low cost yet high performance two–stage, low–noise
amplifier designed primarily for use in Global Positioning Satellite System
(GPS) and other L–band satellite receivers. The broadband nature of the design
makes the device applicable to a variety of L–band applications where high
performance at reasonable current and cost are required. Supply current is
minimized through a current sharing DC cascode circuit configuration. Supply
voltage can be applied to either the VDD pin or the RF output pin for remote
antenna applications. The integrated circuit requires minimal off-chip matching
while allowing for maximum flexibility in optimizing gain and noise figure. An
ENABLE pin is provided to allow for a reduced supply current standby mode.
The design employs Motorola’s low cost planar self–aligned MESFET process
to assure repeatable characteristics at minimal cost.
Usable Frequency Range = 1 to 2 GHz
18 dB Typ Gain at VDD = 5 Volts
1.1 dB Typ Noise Figure at VDD = 5 Volts
Simple Off-chip Matching for Maximum Gain/Noise Figure Flexibility
Single Bias Supply = 3 to 5 Volts
Low Power Consumption = 30 mW (Typ) at 5 Volts
Low Cost Surface Mount Plastic Package
Order MRFIC1501R2 for Tape and Reel.
R2 Suffix = 2,500 Units per 12 mm, 13 inch Reel.
Device Marking = M1501
MRFIC1501
1.6 GHz GaAs
LOW NOISE
AMPLIFIER
CASE 751–06
(SO-8)
GND
1
BIAS
8
GND
VDD
2
7
RF OUT
RF IN
3
6
ENABLE
GND
4
5
2nd STAGE GND
Pin Connections and Functional Block Diagram
REV 2
©
Motorola, Inc. 1998
MOTOROLA RF DEVICE DATA
MRFIC1501
1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2312  1466  2219  2646  986  47  30  45  54  20 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号