SBP1020 THRU SBP10100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· Dual rectifier construction
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25" (6.35mm) from case
CURRENT 10.0Amperes
VOLTAGE 20 to 100 Volts
ITO-220
10 0.5
3.2
0.2
0.1
4.5 0.2
6.4 0.1
2.7 0.2
2.7 0.2
3.7
0
.
2
Mechanical Data
· Case : JEDEC ITO-220 molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
· Polarity : As marked. No suffix indicates Common
Cathode, suffix "A" indicates Common Anode
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 gram
2.54
0.2
0.7
2.54
0.2
0.2
13Min
1.3 0.2
15 0.3
0.5
2.4
PIN 1
PIN 3
Negative CT
Suffix "A"
0.2
0.2
PIN 1
PIN 3
Positive CT
Suffix "C"
+
CASE
PIN 2
CASE
PIN 2
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see Fig. 1)
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105℃
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 5.0A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=100℃
Rθ
JC
T
J
T
STG
-65 to +125
-65 to +150
V
RRM
V
RMS
V
DC
I(
AV
)
I
FRM
I
FSM
SBP
1020
SBP
1030
SBP
1040
SBP
1050
SBP
1060
SBP
1080
SBP
10100
Units
Volts
Volts
Volts
Amps
Amps
Amps
20
14
20
30
21
30
40
28
40
50
35
50
10.0
20.0
150.0
60
42
60
80
56
80
100
70
100
V
F
I
R
0.65
1.0
50
5.0
0.75
0.80
0.85
Volts
mA
℃/W
25
-65 to +150
℃
℃
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES SBP1020 THRU SBP10100
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
5.0
4.0
3.0
2.0
1.0
0
0
20
40
60
80
100
120
150
──
SBP1020-SBP1040
- - - SBP1050-SBP10100
RESISTIVE OR INDUCTIVE LOAD
0.375"(9.5MM) LEAD LENGTH
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
125
PEAK FORWARD SURGE
CURRENT (AMPERES)
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60Hz
100
T
J
=T
J
MAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
LEAD TEMPERATURE (℃)
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT (AMPERES)
T
J
=150℃
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20
10
T
J
=125℃
10
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
T
J
=125℃
1
PULSE WIDTH=300
1% DUTY CYCLE
㎲
1
T
J
=75℃
0.1
0.1
T
J
=25℃
──
SBP1020-SBP1040
- - - SBP1050-SBP10100
0.01
T
J
=25℃
──
SBP1020-SBP1040
- - - SBP1050-SBP10100
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
0
20
40
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5-TYPICAL JUNCTION CAPACITANCE
4000
T
J
=25℃
f=1.0MHz
Vsig=50mVp-p
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
TRANSIENT THERMAL IMPEDANCE,℃/ W
JUNCTION CAPACITANCE (pF)
10
1000
1
──
SBP1020-SBP1040
- - - SBP1050-SBP10100
100
0.1
1
10
100
REVERSE VOLTAGE. VOLTS
0.1
0.01
0.1
1
T, PULSE DURATION, sec.
10
100
MCU
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