SBP2020 THRU SBP20100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· Dual rectifier construction
· High temperature soldering guaranteed:
250℃/10 seconds, 0.25" (6.35mm) from case
CURRENT 20.0Amperes
VOLTAGE 20 to 100 Volts
ITO-220
10 0.5
3.2
0.2
0.1
4.5 0.2
6.4 0.1
2.7 0.2
2.7 0.2
3.7
0
.
2
Mechanical Data
· Case : JEDEC TO-220 molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
· Polarity : As marked. No suffix indicates Common
Cathode, suffix "A" indicates Common Anode
· Mounting Position : Any
· Weight : 0.08ounce, 2.24 grams
2.54
0.2
0.7
2.54
0.2
0.2
13Min
1.3 0.2
15 0.3
0.5
2.4
PIN 1
PIN 3
Negative CT
Suffix "A"
0.2
0.2
PIN 1
PIN 3
Positive CT
Suffix "C"
+
CASE
PIN 2
CASE
PIN 2
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at Tc=105℃
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 10A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=100℃
I
R
Rθ
JC
T
J
T
STG
V
RRM
V
RMS
V
DC
I(
AV
)
SBP
2020
20
14
20
SBP
2030
30
21
30
SBP
2040
40
28
40
SBP
2050
50
35
50
20.0
SBP
2060
60
42
60
SBP
2080
80
56
80
SBP
20100
100
70
100
Units
Volts
Volts
Volts
Amps
I
FSM
150.0
125.0
Amps
V
F
0.60
1.0
0.75
0.90
Volts
mA
℃/W
℃
℃
100.0
3.5
-50 to +125
-65 to +150
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES SBP2020 THRU SBP20100
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
12
SB
P2
02
SB
0 -S
P2
BP
05
20
0-S
40
SB
BP
P2
20
08
60
0-S
BP
20
10
0
FIG.2-TYPICAL FORWARD CHARACTERISTICS
50
10
INSTANTANEOUS FORWARD CURRENT,(A)
8
2010
-SBP
2080
SBP
2060
-SBP
2020
SBP
6
4
2
0
0
20
40
60
80
10
5.0
0
100
120
140
160
180
200
1.0
Tj=25
o
C
Pulse Width 300us
1% Duty Cycle
CASE TEMPERATURE,(
o
C)
0.1
FIG.3-MAXIMUM NON-REPETITIVE FORWARDSURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
250
200
150
Tj=25 C
o
1.0
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
8.3ms Single Half
Sine Wave
JEDEC method
100
50
0
SBP
202
0-SB
P20
SBP
50
2060
~SB
P20
10 0
1
5
10
50
100
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
NUMBER OF CYCLES AT 60Hz
2800
2400
2000
1600
1200
800
400
0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
10
1.0
Tj=75
o
C
SBP
20
20-S
BP2
04
SBP2
050~S
BP20
60
SBP20
80~SB
P2010
0
0
.1
Tj=25 C
o
.01
.05
.1
.5
1
5
10
50
100
.01
0
20
40
60
80
100
120
140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
Microchip MCU
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