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IRFY9130CSCXPBF

Description
Power Field-Effect Transistor, 9.3A I(D), 100V, 0.31ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
CategoryDiscrete semiconductor    The transistor   
File Size36KB,1 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
Download Datasheet Parametric View All

IRFY9130CSCXPBF Overview

Power Field-Effect Transistor, 9.3A I(D), 100V, 0.31ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

IRFY9130CSCXPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, S-MSFM-P3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)9.3 A
Maximum drain-source on-resistance0.31 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AB
JESD-30 codeS-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
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