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IRFY9140X-QR-BR1

Description
15.8A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size11KB,1 Pages
ManufacturerSEMELAB
Environmental Compliance  
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IRFY9140X-QR-BR1 Overview

15.8A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN

IRFY9140X-QR-BR1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMELAB
Parts packaging codeTO-257AB
package instructionFLANGE MOUNT, S-MSFM-P3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)15.8 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AB
JESD-30 codeS-MSFM-P3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
IRFY9140X
Dimensions in mm (inches).
10.6 (0.42)
0.8
(0.03)
4.6 (0.18)
16.5 (0.65)
3.70 Dia. Nom
P-Channel MOSFET in
a Hermetically sealed
TO257AB Metal Package.
1.5(0.53)
10.6 (0.42)
1 2 3
12.70 (0.50 min)
V
DSS
= 100V
I
D
= 15.8A
R
DS(ON)
= 0.2Ω
All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
2.54 (0.1)
BSC
1.0
(0.039)
2.70
(0.106)
TO257AB (TO220M)
PINOUTS
1 – Gate
2 – Drain
Case – Source
Parameter
V
DSS
I
D
P
D
R
DS(ON)
C
ISS
Q
g
t
td(on)
t
tr
t
td(off)
t
f
Drain – Source Breakdown Voltage
Continuous Drain Current
Power Dissipation
Static Drain – Source On–State Resistance
Input Capacitance
Total Gate Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Min.
Typ.
Max.
100
15.8
100
0.2
Units
V
A
W
pF
nC
ns
ns
ns
ns
1400
30
35
85
85
65
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Generated
13-Sep-02

IRFY9140X-QR-BR1 Related Products

IRFY9140X-QR-BR1 IRFY9140XR1 IRFY9140X-QR-B
Description 15.8A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN 15.8A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN 15.8A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Is it lead-free? Lead free Lead free Contains lead
Is it Rohs certified? conform to conform to incompatible
Maker SEMELAB SEMELAB SEMELAB
Parts packaging code TO-257AB TO-257AB TO-257AB
package instruction FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3
Contacts 3 3 3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Shell connection SOURCE SOURCE SOURCE
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 100 V 100 V 100 V
Maximum drain current (ID) 15.8 A 15.8 A 15.8 A
Maximum drain-source on-resistance 0.2 Ω 0.2 Ω 0.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-257AB TO-257AB TO-257AB
JESD-30 code S-MSFM-P3 S-MSFM-P3 S-MSFM-P3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL METAL
Package shape SQUARE SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON
JESD-609 code e1 e1 -
Terminal surface TIN SILVER COPPER TIN SILVER COPPER -
Electrostatic Protection Guide 2
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