OM6502ST datasheet, PDF - EEWORLD Datasheet

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OM6502ST: DescriptionInsulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size19KB，2 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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OM6502ST Overview

Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN

OM6502ST Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-257AA
package instruction	FLANGE MOUNT, S-MSFM-P3
Contacts	3
Reach Compliance Code	compliant
Other features	LOW CONDUCTION LOSS
Shell connection	ISOLATED
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	500 V
Configuration	SINGLE
Maximum landing time (tf)	1500 ns
Gate emitter threshold voltage maximum	4 V
JEDEC-95 code	TO-257AA
JESD-30 code	S-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	42 W
Certification status	Not Qualified
Maximum rise time (tr)	1000 ns
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	700 ns
Nominal on time (ton)	150 ns

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OM6501ST

OM6502ST

INSULATED GATE BIPOLAR TRANSISTOR

(IGBT) IN A HERMETIC TO-257AA PACKAGE

500 Volt, 5 And 10 Amp, N-Channel IGBT

In A Hermetic Metal Package

FEATURES

•

Isolated Hermetic Metal Package

High Input Impedance

Low On-Voltage

High Current Capability

Fast Turn-Off

Low Conductive Losses

Available Screened to MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

The IGBT power transistor features a high impedance insulated gate and a low

on-resistance characteristic of bipolar transistors. These devices are ideally suited

for motor drives, UPS converters, power supplies and resonant power converters.

MAXIMUM RATINGS

@ 25°C Unless Specified Otherwise

PART

NUMBER

OM6501ST

OM6502ST

I

C

(Cont.)

@ 90°C, A

5

10

V

(BR)CES

V

500

V

CE (sat)

(Typ.)

V

2.8

T

f

(Typ.)

ns

400

q

JC

°C/W

3.8

3.0

P

D

W

35

42

T

J

°C

150

3.1

SCHEMATIC

Collector

MECHANICAL OUTLINE

.420

.410

.200

.190

.045

.035

.665

.645

PACKAGE OPTIONS

.150

.140

1 2 3

C E G

.537

.527

.430

.410

.038 MAX.

Gate

.750

.500

MOD PAK

.005

Emitter

.035

.025

.100 TYP.

.120 TYP.

Pin 1: Collector

Pin 2: Emitter

Pin 3: Gate

6 PIN SIP

Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.

4 11 R2

Supersedes 2 07 R1

3.1 - 139

OM6502ST Related Products

	OM6502ST	OM6501ST	OM6502STT	OM6501STT
Description	Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	Insulated Gate Bipolar Transistor, 5A I(C), 500V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN	Insulated Gate Bipolar Transistor, 5A I(C), 500V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-257AA	TO-257AA	TO-257AA	TO-257AA
package instruction	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Contacts	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
Other features	LOW CONDUCTION LOSS	LOW CONDUCTION LOSS	LOW CONDUCTION LOSS	LOW CONDUCTION LOSS
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	10 A	5 A	10 A	5 A
Collector-emitter maximum voltage	500 V	500 V	500 V	500 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
JEDEC-95 code	TO-257AA	TO-257AA	TO-257AA	TO-257AA
JESD-30 code	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal on time (ton)	150 ns	187 ns	150 ns	187 ns

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