Insulated Gate Bipolar Transistor, 30A I(C), 500V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN
| Parameter Name | Attribute value |
| Maker | Omnirel Corp. |
| package instruction | HERMETIC SEALED, METAL, TO-258AA, 3 PIN |
| Reach Compliance Code | unknown |
| Other features | LOW CONDUCTION LOSS |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 30 A |
| Collector-emitter maximum voltage | 500 V |
| Configuration | SINGLE |
| JEDEC-95 code | TO-258AA |
| JESD-30 code | R-MSFM-P3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 1000 ns |
| Nominal on time (ton) | 100 ns |
| OM6504SCT | OM6503SCV | OM6503SCT | OM6504SCV | |
|---|---|---|---|---|
| Description | Insulated Gate Bipolar Transistor, 30A I(C), 500V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN | Insulated Gate Bipolar Transistor, 20A I(C), 500V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN | Insulated Gate Bipolar Transistor, 20A I(C), 500V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN | Insulated Gate Bipolar Transistor, 30A I(C), 500V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, METAL, TO-258AA, 3 PIN |
| Maker | Omnirel Corp. | Omnirel Corp. | Omnirel Corp. | Omnirel Corp. |
| package instruction | HERMETIC SEALED, METAL, TO-258AA, 3 PIN | HERMETIC SEALED, METAL, TO-258AA, 3 PIN | HERMETIC SEALED, METAL, TO-258AA, 3 PIN | HERMETIC SEALED, METAL, TO-258AA, 3 PIN |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Other features | LOW CONDUCTION LOSS | LOW CONDUCTION LOSS | LOW CONDUCTION LOSS | LOW CONDUCTION LOSS |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Maximum collector current (IC) | 30 A | 20 A | 20 A | 30 A |
| Collector-emitter maximum voltage | 500 V | 500 V | 500 V | 500 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| JEDEC-95 code | TO-258AA | TO-258AA | TO-258AA | TO-258AA |
| JESD-30 code | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | POWER CONTROL | POWER CONTROL | POWER CONTROL | POWER CONTROL |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal on time (ton) | 100 ns | 60 ns | 60 ns | 100 ns |