IRG4CH40UB datasheet, PDF - EEWORLD Datasheet

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IRG4CH40UB: DescriptionInsulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 6 INCH, WAFER; CategoryDiscrete semiconductor The transistor; File Size118KB，1 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRG4CH40UB Overview

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 6 INCH, WAFER

IRG4CH40UB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	6 INCH, WAFER
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	ULTRA FAST SPEED
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE
JESD-30 code	O-XUUC-N
Number of components	1
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON

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PD- 91769

IRG4CH40UB

IRG4CH40UB IGBT Die in Wafer Form

C

G

E

1200 V

Size 4

Ultra-Fast Speed

6" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

V

CE (on)

V

(BR)CES

V

GE(th)

I

CES

I

GES

Description

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Guaranteed (Min/Max)

4.5V Max.

1200V Min.

3.0V Min., 6.0V Max.

300 µA Max.

±

11 µA Max.

Test Conditions

I

C

= 10A, T

J

= 25°C, V

GE

= 15V

T

J

= 25°C, I

CES

= 250µA, V

GE

= 0V

V

GE

= V

CE

, T

J

=25°C, I

C

=250µA

T

J

= 25°C, V

CE

= 1200V

T

J

= 25°C, V

GE

= +/- 20V

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Wafer Diameter:

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment:

Recommended Die Attach Conditions

Reference Standard IR packaged part ( for design ) : IRG4PH40U

Cr-Ni / V-Ag ( 1kA-2kA-.2.5kA )

99% Al, 1% Si (4 microns)

0.170" x 0.243"

150mm, with std. < 100 > flat

.015" + / -.003"

01-5242

100 Microns

0.25mm Diameter Minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Die Outline

9/24/98

IRG4CH40UB Related Products

	IRG4CH40UB	IRG4CH40UBPBF
Description	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 6 INCH, WAFER	1200V, N-CHANNEL IGBT, 6 INCH, WAFER
Is it Rohs certified?	incompatible	conform to
Maker	Infineon	Infineon
package instruction	6 INCH, WAFER	UNCASED CHIP, O-XUUC-N
Reach Compliance Code	unknown	compliant
ECCN code	EAR99	EAR99
Other features	ULTRA FAST SPEED	ULTRA FAST SPEED
Collector-emitter maximum voltage	1200 V	1200 V
Configuration	SINGLE	SINGLE
JESD-30 code	O-XUUC-N	O-XUUC-N
Number of components	1	1
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	ROUND
Package form	UNCASED CHIP	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON

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