Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL PACKAGE-3
| Parameter Name | Attribute value |
| Maker | Omnirel Corp. |
| package instruction | HERMETIC SEALED, METAL PACKAGE-3 |
| Reach Compliance Code | unknown |
| Other features | HIGH SPEED |
| Maximum collector current (IC) | 8 A |
| Collector-emitter maximum voltage | 1000 V |
| Configuration | SINGLE |
| JEDEC-95 code | TO-257AA |
| JESD-30 code | R-MSFM-P3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 200 ns |
| Nominal on time (ton) | 50 ns |
| OM6524STT | 2SB1100 | OM6525SAV | OM6524STV | |
|---|---|---|---|---|
| Description | Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL PACKAGE-3 | isc Silicon PNP Darlington Power Transistor | Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 | Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-257AA, HERMETIC SEALED, METAL PACKAGE-3 |
| Maker | Omnirel Corp. | - | Omnirel Corp. | Omnirel Corp. |
| package instruction | HERMETIC SEALED, METAL PACKAGE-3 | - | HERMETIC SEALED, METAL PACKAGE-3 | HERMETIC SEALED, METAL PACKAGE-3 |
| Reach Compliance Code | unknown | - | unknown | unknown |
| Other features | HIGH SPEED | - | HIGH SPEED | HIGH SPEED |
| Maximum collector current (IC) | 8 A | - | 8 A | 8 A |
| Collector-emitter maximum voltage | 1000 V | - | 1000 V | 1000 V |
| Configuration | SINGLE | - | SINGLE WITH BUILT-IN DIODE | SINGLE |
| JEDEC-95 code | TO-257AA | - | TO-254AA | TO-257AA |
| JESD-30 code | R-MSFM-P3 | - | S-MSFM-P3 | R-MSFM-P3 |
| Number of components | 1 | - | 1 | 1 |
| Number of terminals | 3 | - | 3 | 3 |
| Package body material | METAL | - | METAL | METAL |
| Package shape | RECTANGULAR | - | SQUARE | RECTANGULAR |
| Package form | FLANGE MOUNT | - | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | - | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | - | Not Qualified | Not Qualified |
| surface mount | NO | - | NO | NO |
| Terminal form | PIN/PEG | - | PIN/PEG | PIN/PEG |
| Terminal location | SINGLE | - | SINGLE | SINGLE |
| transistor applications | POWER CONTROL | - | POWER CONTROL | POWER CONTROL |
| Transistor component materials | SILICON | - | SILICON | SILICON |
| Nominal off time (toff) | 200 ns | - | 200 ns | 200 ns |
| Nominal on time (ton) | 50 ns | - | 50 ns | 50 ns |