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IRG4PC60F-PPBF

Description
Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size224KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRG4PC60F-PPBF Overview

Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN

IRG4PC60F-PPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
Maximum collector current (IC)90 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
JEDEC-95 codeTO-247AC
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)770 ns
Nominal on time (ton)105 ns
PD - 94440A
IRG4PC60F-P
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
• Solder plated version of industry standard
TO-247AC package.
C
Fast Speed IGBT
V
CES
= 600V
G
E
V
CE(on)
typ.
=
1.50V
@V
GE
= 15V, I
C
= 60A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available.
• IGBT's optimized for specified application conditions.
• Solder plated version of the TO-247 allows the reflow
soldering of the package heatsink to a substrate material.
• Designed for best performance when used with IR
HEXFRED & IR FRED companion diodes.
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current

Clamped Inductive Load Current
‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Maximum Reflow Temperature
‡
Max.
600
90
60
360
360
± 20
200
520
210
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
230 (Time above 183°C
should not exceed 100s)
Units
V
A
V
mJ
W
°C
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (Typical Socket Mount)
Junction-to-Ambient (PCB Mount, Steady State)
†
Weight
Typ.
–––
0.24
–––
–––
6 (0.21)
Max.
0.24
–––
40
20
–––
Units
°C/W
g (oz)
www.irf.com
1
12/4/09

IRG4PC60F-PPBF Related Products

IRG4PC60F-PPBF IRG4PC60F-P
Description Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction FLANGE MOUNT, R-PSFM-T3 TO-3P, 3 PIN
Reach Compliance Code compliant compliant
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 90 A 90 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE SINGLE
JEDEC-95 code TO-247AC TO-247AC
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED 250
Polarity/channel type N-CHANNEL N-CHANNEL
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 30
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 770 ns 770 ns
Nominal on time (ton) 105 ns 105 ns
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