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OM60L60SB

Description
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES
CategoryDiscrete semiconductor    The transistor   
File Size128KB,2 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

OM60L60SB Overview

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES

OM60L60SB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)75 A
Collector-emitter maximum voltage600 V
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation(Abs)250 W
VCEsat-Max1.8 V

OM60L60SB Related Products

OM60L60SB OM45L120SB
Description Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES
Is it Rohs certified? incompatible incompatible
Reach Compliance Code unknown unknown
Maximum collector current (IC) 75 A 70 A
Collector-emitter maximum voltage 600 V 1200 V
Number of components 1 1
Maximum operating temperature 150 °C 150 °C
Maximum power dissipation(Abs) 250 W 250 W
VCEsat-Max 1.8 V 3 V

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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