Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Infineon |
| package instruction | , |
| Reach Compliance Code | unknown |
| Maximum collector current (IC) | 75 A |
| Collector-emitter maximum voltage | 600 V |
| Number of components | 1 |
| Maximum operating temperature | 150 °C |
| Maximum power dissipation(Abs) | 250 W |
| VCEsat-Max | 1.8 V |
| OM60L60SB | OM45L120SB | |
|---|---|---|
| Description | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES | Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES |
| Is it Rohs certified? | incompatible | incompatible |
| Reach Compliance Code | unknown | unknown |
| Maximum collector current (IC) | 75 A | 70 A |
| Collector-emitter maximum voltage | 600 V | 1200 V |
| Number of components | 1 | 1 |
| Maximum operating temperature | 150 °C | 150 °C |
| Maximum power dissipation(Abs) | 250 W | 250 W |
| VCEsat-Max | 1.8 V | 3 V |