OM60L60SBT datasheet, PDF - EEWORLD Datasheet

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OM60L60SBT: DescriptionInsulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size65KB，2 Pages; ManufacturerOmnirel Corp.

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OM60L60SBT Overview

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-3

OM60L60SBT Parametric

Parameter Name	Attribute value
Maker	Omnirel Corp.
package instruction	HERMETIC SEALED PACKAGE-3
Reach Compliance Code	unknown
Other features	FAST, HIGH RELIABILITY
Shell connection	ISOLATED
Maximum collector current (IC)	75 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
JESD-30 code	R-MSFM-D3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	SINGLE
transistor applications	POWER CONTROL
Transistor component materials	SILICON

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Maker	Omnirel Corp.	-	-	Omnirel Corp.	Omnirel Corp.	Omnirel Corp.	Omnirel Corp.	-
package instruction	HERMETIC SEALED PACKAGE-3	HERMETIC SEALED PACKAGE-3	HERMETIC SEALED PACKAGE-3	HERMETIC SEALED PACKAGE-3	HERMETIC SEALED PACKAGE-3	HERMETIC SEALED PACKAGE-3	HERMETIC SEALED PACKAGE-3	-
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	-
Other features	FAST, HIGH RELIABILITY	FAST, HIGH RELIABILITY	FAST, HIGH RELIABILITY	FAST, HIGH RELIABILITY	FAST, HIGH RELIABILITY, HIGH SPEED	FAST, HIGH RELIABILITY, HIGH SPEED	FAST, HIGH RELIABILITY, HIGH SPEED	-
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-
Maximum collector current (IC)	75 A	70 A	70 A	75 A	70 A	70 A	75 A	-
Collector-emitter maximum voltage	600 V	1200 V	1200 V	600 V	1200 V	1200 V	600 V	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
JESD-30 code	R-MSFM-D3	R-MSFM-D3	R-MSFM-D3	R-MSFM-D3	R-MSFM-D3	R-MSFM-D3	R-MSFM-D3	-
Number of components	1	1	1	1	1	1	1	-
Number of terminals	3	3	3	3	3	3	3	-
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
surface mount	NO	NO	NO	NO	NO	NO	NO	-
Terminal form	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	-
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-
transistor applications	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-

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