OM6531SST datasheet, PDF - EEWORLD Datasheet

OM6531SST: DescriptionInsulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL, SIP-6; CategoryDiscrete semiconductor The transistor; File Size79KB，2 Pages; ManufacturerOmnirel Corp.

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OM6531SST Overview

Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL, SIP-6

Parameter Name	Attribute value
Maker	Omnirel Corp.
package instruction	HERMETIC SEALED, METAL, SIP-6
Reach Compliance Code	unknown
Other features	HIGH SPEED
Shell connection	ISOLATED
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	1000 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code	R-MSFM-T6
Number of components	2
Number of terminals	6
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	200 ns
Nominal on time (ton)	50 ns

	OM6531SST	2SC2120
Description	Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL, SIP-6	isc Silicon NPN Transistor

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