|
OM6532SSV |
OM6532SST |
| Description |
Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL, SIP-6 |
Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL, SIP-6 |
| Maker |
Omnirel Corp. |
Omnirel Corp. |
| package instruction |
HERMETIC SEALED, METAL, SIP-6 |
HERMETIC SEALED, METAL, SIP-6 |
| Reach Compliance Code |
unknown |
unknown |
| Other features |
HIGH SPEED |
HIGH SPEED |
| Shell connection |
ISOLATED |
ISOLATED |
| Maximum collector current (IC) |
15 A |
15 A |
| Collector-emitter maximum voltage |
1000 V |
1000 V |
| Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| JESD-30 code |
R-MSFM-T6 |
R-MSFM-T6 |
| Number of components |
2 |
2 |
| Number of terminals |
6 |
6 |
| Package body material |
METAL |
METAL |
| Package shape |
RECTANGULAR |
RECTANGULAR |
| Package form |
FLANGE MOUNT |
FLANGE MOUNT |
| Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
| Certification status |
Not Qualified |
Not Qualified |
| surface mount |
NO |
NO |
| Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
| Terminal location |
SINGLE |
SINGLE |
| transistor applications |
POWER CONTROL |
POWER CONTROL |
| Transistor component materials |
SILICON |
SILICON |
| Nominal off time (toff) |
200 ns |
200 ns |
| Nominal on time (ton) |
50 ns |
50 ns |