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OM6532SSV

Description
Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL, SIP-6
CategoryDiscrete semiconductor    The transistor   
File Size79KB,2 Pages
ManufacturerOmnirel Corp.
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OM6532SSV Overview

Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL, SIP-6

OM6532SSV Parametric

Parameter NameAttribute value
MakerOmnirel Corp.
package instructionHERMETIC SEALED, METAL, SIP-6
Reach Compliance Codeunknown
Other featuresHIGH SPEED
Shell connectionISOLATED
Maximum collector current (IC)15 A
Collector-emitter maximum voltage1000 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-MSFM-T6
Number of components2
Number of terminals6
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)200 ns
Nominal on time (ton)50 ns

OM6532SSV Related Products

OM6532SSV OM6532SST
Description Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL, SIP-6 Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL, SIP-6
Maker Omnirel Corp. Omnirel Corp.
package instruction HERMETIC SEALED, METAL, SIP-6 HERMETIC SEALED, METAL, SIP-6
Reach Compliance Code unknown unknown
Other features HIGH SPEED HIGH SPEED
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 15 A 15 A
Collector-emitter maximum voltage 1000 V 1000 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code R-MSFM-T6 R-MSFM-T6
Number of components 2 2
Number of terminals 6 6
Package body material METAL METAL
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 200 ns 200 ns
Nominal on time (ton) 50 ns 50 ns

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