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LL4151

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size31KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance  
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LL4151 Overview

Rectifier Diode,

LL4151 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
Diode typeRECTIFIER DIODE
LL4151
FEATURES :
• High switching speed: max. 4 ns
• Reverse voltage:max. 50 V
• Peak reverse voltage:max. 75 V
• Pb / RoHS Free
HIGH SPEED SWITCHING DIODE
MiniMELF (SOD-80C)
Cathode Mark
φ
0.063 (1.64)
0.055 (1.40)
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
Mounting Pad Layout
0.098 (2.50)
Max.
0.049 (1.25)Min.
MECHANICAL DATA :
Case:
MiniMELF Glass Case (SOD-80)
Weight:
approx. 0.05g
0.079 (2.00)Min.
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Continuous Current
Maximum Average Forward Current
Half Wave Rectification with Resistive Load , f
50Hz
(1)
Maximum Surge Forward Current at t < 1s, Tj = 25°C
Maximum Power Dissipation
(1)
Thermal Resistance Junction to Ambient Air
Maximum Junction Temperature
Storage Temperature Range
Note:
(1) Valid provided that electrodes are kept at ambient temperature
(1)
25
°
C ambient temperature unless otherwise specified.)
Symbol
V
RM
V
R
I
F
I
F(AV)
I
FSM
P
D
R
θ
JA
T
J
T
S
Value
75
50
200
150
0.5
500
350
175
-65 to + 175
Unit
V
V
V
mA
A
mW
°C/W
°C
°C
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
Symbol
I
R
V
F
Cd
Trr
Test Condition
V
R
= 50 V
V
R
= 50 V , Tj = 150
°C
I
F
= 50 mA
f = 1MHz ; V
R
= 0
I
F
= 10 mA to I
R
= 10mA
to I
R
= 1mA, R
L
= 100Ω
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
0.05
50
1.0
2.5
4
Unit
µA
µA
V
pF
ns
Page 1 of 2
Rev. 02 : March 25, 2005

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