BL
FEATURES
LL4151
REVERSE VOLTAGE : 50 V
CURRENT: 0.15 A
SMALL SIGNAL SWITCHING DIODE
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
MINI-MELF
Cathode indification
0.1
MECHANICAL DATA
Case: MINI-MELF,glass case
3.4
+0.3
-0.1
0.3
1 .5
0.1
Polarity: Color band denotes cathode
Weight:
0.031 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified.
MAXIMUM RATINGS
LL4151
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
half w ave rectification w ith resistive load
V
R
=0V
Forw ard surge current @ t
P
=1μ
s
Pow er dissipation
@ T
A
=
Junction temperature
Storage temperature range
UNITS
V
V
mA
A
mW
V
R
V
RM
I
F(AV)
I
FSM
P
tot
T
J
T
STG
50
75
150
1)
2.0
500
1)
175
-55 --- +175
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
Forw ard voltage @ I
F
=50mA
Leakage current
@ V
R
=50V
@ V
R
=50V T
J
=150
Capacitance
@ V
R
=0V,f=1MH
z,V
HF
=50mV
Reverse breakdown voltage
tested with 5 A pulses
Reverse recovery time
from I
F
=10mA to I
R
=10mA to I
R
=1mA
from I
F
=10mA to I
R
=1mA, V
R
=6V. R
L
=100 .
Thermal resistance junction to ambient
Rectification efficiency @ 100MHz,V
RF
=2V
V
F
I
R
I
R
C
J
V
(BR)R
t
rr
R
JA
MIN
-
-
-
-
75.0
-
TYP
0.8
-
-
-
-
-
MAX
1.0
50
50
2.0
-
4
2
500
1)
-
UNITS
V
nA
A
pF
V
ns
ns
K/W
-
v
0.45
-
1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
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Document Number LL4151
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- ADMISSIBLE POWER DISSIPATION
NNNNNN
VERSUS AMBIENT TEMPERATURE
LL4151
FIG.2 -- FORWARD CHARACTERISTICS
mW
1000
900
800
700
mA
10
3
10
2
P
tot
600
500
I
F
10
T
J
=100
T
J
=25
400
1
300
200
10
-1
100
0
0
100
200
T
A
10
-2
0
1
V
F
2V
FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
I
FRM
10
V=tp/T
I
FRM
T=1/fp
tp
n=0
0.1
1
T
0.2
0.5
0.1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10S
tp
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Document Number LL4151
BL
GALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
FIG.4 -- RECTIFICATION EFFICIENCY
JJJJJJJJMEASUREMENT
CIRCUIT
LLL4151
FIG.5 -- RELATIVE CAPACITANCE VERSUS
JJJJJJJJJJJJJJ
VOLTAGE
1.1
D.U.T.
60
V
RF
=2V
2nF
5K
V
O
Ctot(V
R
)
Ctot(OV)
1.0
T
J
=25
f=1MHz
0.9
0.8
0.7
0
2
4
6
8
1 0V
V
R
FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATUREFF
FIG.7 -- DYNAMIC FORWARD RESISTANCE
FFFVERSUS
FORWARD CURRENT
nA
10
4
10
4
T
J
=25
f=1MHz
10
3
10
3
r
10
2
F
10
2
10
10
V
R
=50V
1
0
10 0
20 0
1
10
-2
10
-1
1
10
10
2
mA
I
F
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Document Number LL4151
BL
GALAXY ELECTRICAL
3.
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