SDD165
Diode-Diode Modules
Dimensions in mm (1mm=0.0394")
Type
SDD165N08
SDD165N12
SDD165N14
SDD165N16
SDD165N18
V
RSM
V
900
1300
1500
1700
1900
V
RRM
V
800
1200
1400
1600
1800
Symbol
I
FRMS
I
FAVM
T
VJ
=T
VJM
T
C
=100
o
C; 180
o
sine
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
Test Conditions
Maximum Ratings
300
165
Unit
A
I
FSM
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
4700
5000
4100
4300
110000
104000
84000
77000
-40...+150
150
-40...+125
A
i
2
dt
A
2
s
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
50/60Hz, RMS
_
I
ISOL
<1mA
t=1min
t=1s
o
C
3000
3600
2.25-2.75/20-25
4.5-5.5/40-48
120
V~
Nm/lb.in.
g
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
SDD165
Diode-Diode Modules
Symbol
I
R
V
F
V
TO
r
T
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
per diode; DC current
per module
per diode; DC current
per module
T
VJ
=T
VJM
; V
R
=V
RRM
I
F
=300A; T
VJ
=25
o
C
Test Conditions
Characteristic Values
20
1.3
0.8
1.3
550
235
0.21
0.105
0.31
0.155
12.7
9.6
50
Unit
mA
V
V
m
uC
A
K/W
K/W
mm
mm
m/s
2
For power-loss calculations only
T
VJ
=T
VJM
T
VJ
=125
o
C; I
F
=300A; -di/dt=50A/us
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
FEATURES
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Supplies for DC power equipment
* DC supply for PWM inverter
* Field supply for DC motors
* Battery DC power supplies
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
SDD165
Diode-Diode Modules
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 2 i
2
dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
2 x SDD165
SDD165
Diode-Diode Modules
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
3 x SDD165
Fig. 6 Transient thermal impedance
junction to case (per diode)
R
thJC
for various conduction angles d:
d
DC
180
o
C
120
o
C
60
o
C
30
o
C
R
thJC
(K/W)
0.210
0.223
0.233
0.260
0.295
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.0087
0.0163
0.185
t
i
(s)
0.001
0.065
0.4
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
R
thJK
for various conduction angles d:
d
DC
180
o
C
120
o
C
60
o
C
30
o
C
R
thJK
(K/W)
0.31
0.323
0.333
0.360
0.395
Constants for Z
thJK
calculation:
i
1
2
3
4
R
thi
(K/W)
0.0087
0.0163
0.185
0.1
t
i
(s)
0.001
0.065
0.4
1.29
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