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RD02MUS1B-101,T112

Description
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
CategoryDiscrete semiconductor    The transistor   
File Size214KB,9 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

RD02MUS1B-101,T112 Overview

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10

RD02MUS1B-101,T112 Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionCHIP CARRIER, R-XQCC-N3
Contacts10
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)1.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-XQCC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationQUAD
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
0.2+/-0.05
(0.22)
(0.22)
(0.25)
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS1B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
RD02MUS1B improved a drain surge than
RD02MUS1 by optimizing MOSFET structure.
OUTLINE
DRAWING
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
6.0+/-0.15
1
4.9+/-0.15
1.0+/-0.05
2
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
3
(0.25)
INDEX MARK
(Gate)
0.2+/-0.05
0.9+/-0.1
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD02MUS1B-101,T112 is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
RD02MUS1B
17 Aug 2010
1/9
3.5+/-0.05
2.0+/-0.05
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