OM120L60SB
Preliminary Data Sheet
OM100F60SB
IGBTS IN HERMETIC ISOLATED POWER
BLOCK PACKAGES
OM90L120SB
OM70F120SB
High Current, High Voltage 600V And 1200V,
Up To 150 Amp IGBTs With FRED Diodes
FEATURES
•
•
•
•
•
•
•
Includes Internal FRED Diode
Rugged Package Design
Solder Terminals
Very Low Saturation Voltage
Fast Switching, Low Drive Current
Available Screened To MIL-S-19500, TX, TXV And S Levels
Ceramic Feedthroughs
DESCRIPTION
This series of hermetically packaged products feature the latest advanced IGBT
technology combined with a package designed specifically for high efficiency, high
current applications. They are ideally suited for Hi-Rel requirements where small
size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
GENERAL CHARACTERISTICS
Part
Number
OM120L60SB
OM90L120SB
OM100F60SB
OM70F120SB
V
CE
(V)
600
1200
600
1200
I
C
(A)
150
140
150
140
@ 25°C
Type
Lo Sat.
Lo Sat.
Hi Speed
Hi Speed
V
CE(sat)
1.8 Volts
3 Volts
2.7 Volts
4 Volts
3.1
SCHEMATIC
C
E
G
3.1 - 9
4 11 R0
OM120L60SB OM90L120SB OM100F60SB OM70F120SB
ELECTRICAL CHARACTERISTICS: OM120L60SB
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 500 µA, V
CE
= 0 V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
V
(BR)CES
I
CES
600
-
-
-
-
-
-
-
-
0.5
2.0
±200
V
mA
mA
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 0.5 mA
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 120 A
V
GE(th)
V
CE(sat)
2.5
-
-
-
5.0
1.8
V
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 10 V, I
C
= 120 A
V
GE
= 0,
V
CE
= 25 V,
f = 1.0 mHz
g
fs
C
iss
C
oss
C
rss
50
-
-
-
-
8000
680
200
-
-
-
-
S
pF
pF
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
CC
= 480 V, I
C
= 120 A,
R
GS
= 2.7 , V
GS
= 15 V,
L = 100 µH
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
50
200
600
500
-
-
-
-
nS
nS
nS
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-Off Delay Time
Fall Time
Turn-Off Losses
V
CE(clamp)
= 480 V, I
C
= 120A
V
GE
= 15 V, R
g
= 2.7
L = 100 µH, T
j
= 125°C
t
d(on)
t
f
E
(OFF)
-
-
-
1000
1000
52
-
-
-
nS
nS
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 120 A, T
j
= 25°C
I
F
= 120 A, T
j
= 125°C
Maximum Reverse Current
V
R
= 600 V, T
C
= 25°C
V
R
= 800 V, T
C
= 125°C
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
V
R
= 30 V, T
j
= 25°C
V
f
I
r
t
rr
-
-
-
-
-
-
-
-
-
-
1.85
1.50
500
28
50
µA
mA
nS
V
ELECTRICAL CHARACTERISTICS: OM90L120SB
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 6 mA, V
CE
= 0 V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
V
(BR)CES
I
CES
1200
-
-
-
-
-
-
-
-
0.6
2.4
±200
V
mA
mA
nA
3.1
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 8 mA
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 90 A
V
GE(th)
V
CE(sat)
4.0
-
-
-
8.0
3.0
V
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 6 V, I
C
= 90 A
V
GE
= 0,
V
CE
= 25 V,
f = 1.0 mHz
g
fs
C
iss
C
oss
C
rss
50
-
-
-
-
8500
400
2400
-
-
-
-
S
pF
pF
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
CC
= 960 V, I
C
= 90 A,
R
GS
= 2.7 , V
GS
= 15 V,
L = 100 µH
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
80
250
450
1200
-
-
-
-
nS
nS
nS
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-Off Delay Time
Fall Time
Turn-Off Losses
V
CE(clamp)
= 960 V, I
C
= 90 A
V
GE
= 15 V, R
g
= 2.7
L = 100 µH, T
j
= 125°C
t
d(on)
t
f
E
(OFF)
-
-
-
450
1200
54
-
-
-
nS
nS
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 105 A, T
j
= 25°C
I
F
= 105 A, T
j
= 125°C
Maximum Reverse Current
V
R
= 1200 V, T
C
= 25°C
V
R
= 960 V, T
C
= 125°C
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
V
R
= 30 V, T
j
= 25°C
V
f
I
r
t
rr
-
-
-
-
-
-
-
-
-
-
2.55
2.15
4.4
28
60
mA
mA
nS
V
3.1 - 10
OM120L60SB OM90L120SB OM100F60SB OM70F120SB
ELECTRICAL CHARACTERISTICS: OM100F60SB
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 500 µA, V
CE
= 0 V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
V
(BR)CES
I
CES
600
-
-
-
-
-
-
-
-
0.5
2.0
±200
V
mA
mA
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 0.5 mA
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 100 A
V
GE(th)
V
CE(sat)
2.5
-
-
-
5.0
2.7
V
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 10 V, I
C
= 100 A
V
GE
= 0,
V
CE
= 25 V,
f = 1.0 mHz
g
fs
C
iss
C
oss
C
rss
50
-
-
-
-
8000
680
200
-
-
-
-
S
pF
pF
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
CC
= 480 V, I
C
= 100 A,
R
GS
= 2.7 , V
GS
= 15 V, L = 100 µH
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
50
200
200
300
-
-
-
-
nS
nS
nS
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-Off Delay Time
Fall Time
Turn-Off Losses
V
CE(clamp)
= 480 V, I
C
= 100 A
V
GE
= 15 V, R
g
= 2.7
L = 100 µH, T
j
= 125°C
t
d(on)
t
f
E
(OFF)
-
-
-
300
600
1.5
-
-
-
nS
nS
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 120 A, T
j
= 25°C
I
F
= 120 A, T
j
= 150°C
Maximum Reverse Current
V
R
= 600 V, T
C
= 25°C
V
R
= 480 V, T
C
= 125°C
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
V
R
= 30 V, T
j
= 25°C
V
f
I
r
t
rr
-
-
-
-
-
-
-
-
-
-
1.85
1.50
400
28
50
µA
mA
nS
V
ELECTRICAL CHARACTERISTICS: OM70L120SB
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 6 mA, V
CE
= 0 V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
V
(BR)CES
I
CES
1200
-
-
-
-
-
-
-
-
0.6
2.4
±200
V
mA
mA
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 8 mA
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 70 A
V
GE(th)
V
CE(sat)
4.0
-
-
-
8.0
4.0
V
V
3.1
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 10 V, I
C
= 70 A
V
GE
= 0,
V
CE
= 25 V,
f = 1.0 mHz
g
fs
C
iss
C
oss
C
rss
50
-
-
-
-
7600
800
120
-
-
-
-
S
pF
pF
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
CC
= 960 V, I
C
= 70 A,
R
GS
= 2.7 , V
GS
= 15 V,
L = 100 µH
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
80
150
400
700
-
-
-
-
nS
nS
nS
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-Off Delay Time
Fall Time
Turn-Off Losses
V
CE(clamp)
= 600 V, I
C
= 70 A
V
GE
= 15 V, R
g
= 2.7
L = 100 µH, T
j
= 125°C
t
d(on)
t
f
E
(OFF)
-
-
-
400
1100
110
-
-
-
nS
nS
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 105 A, T
j
= 25°C
I
F
= 105 A, T
j
= 125°C
Maximum Reverse Current
V
R
= 1200 V, T
C
= 25°C
V
R
= 960 V, T
C
= 125°C
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
V
R
= 30 V, T
j
= 25°C
V
f
I
r
t
rr
-
-
-
-
-
-
-
-
-
-
2.55
2.15
4.4
28
60
mA
mA
nS
V
3.1 - 11
OM120L60SB OM90L120SB OM100F60SB OM70F120SB
ABSOLUTE MAXIMUM RATINGS
IGBT
Parameters
V
CE
V
CER
I
C
@ T
C
= 25°C
I
C
@ T
C
= 90°C
I
C
Pulsed
Junction-To-Case
Junction-To-Ambient
R
thJC
R
thJA
Drain Source Voltage
Drain Gate Voltage (R
ge
= 20 K )
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor
Junction-To-Case
Junction-To-Ambient
(T
C
= 25°C unless otherwise noted)
120L60SB
600
600
150
120
400
3.33
.03
0.3
30
90L120SB
1200
1200
140
90
360
3.33
.03
0.3
30
100F60SB
600
600
150
100
400
3.33
.03
0.3
30
70F120SB
1200
1200
140
70
280
3.33
.03
0.3
30
Units
V
V
A
A
A
W/°C
W/°C
°C/W
°C/W
Rectifier
PIV
I
O
t
rr
600
120
35
1200
105
40
600
120
35
1200
105
40
V
A
nSec
MECHANICAL OUTLINE
2.000
1.500
.250
2 PLCS.
. 25 DIA.
1
5 PLCS.
.515
MAX.
.050
3.1
1.250
.625
.125
.472
C
E
G
1.500
±010
.510
.324
.375
.875
1.375
1.750
.166 DIA.
3 PLCS.
.030
±010
.275
.375
±010
TERMINAL 1
.100 DIA.
3 PLCS.
.225
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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