DATA SHEET
PHOTOCOUPLER
PS2911-1
HIGH CTR, 4-PIN ULTRA SMALL PACKAGE
FLAT-LEAD PHOTOCOUPLER
−NEPOC
Series−
DESCRIPTION
The PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor in one package for high density mounting applications.
An ultra small flat-lead package has been provided which realizes a reduction in mounting area of about 30%
compared with the PS28xx series.
FEATURES
• Ultra small flat-lead package (4.6 (L)
×
2.5 (W)
×
2.1 (H) mm)
• High current transfer ratio (CTR = 200% TYP. @ I
F
= 1 mA, V
CE
= 5 V)
• High isolation voltage (BV = 2 500 Vr.m.s.)
• Ordering number of taping product: PS2911-1-F3, F4: 3 500 pcs/reel
APPLICATIONS
• DC/DC converter
• Modem/PC card
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PN10061EJ01V0DS (1st edition)
(Previous No. P14802EJ3V0DS00)
Date Published November 2001 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Corporation 2000
©
NEC Compound Semiconductor Devices 2001
PS2911-1
PACKAGE DIMENSIONS (UNIT: mm)
TOP VIEW
4
3
2.5±0.3
4
3
N
1
2
4.1 MIN.
4.6±0.2
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
5.0±0.2
2.1 MAX.
0.4±0.1
1.27
0.15
+0.1
–0.05
0.2±0.1
MARKING
11
N
Last number of
type No. : 11
An initial of "NEC"
111
No. 1 pin
mark
(knicked
corner)
Assembly lot
1 11
Week assembled
Year assembled
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance
Creepage Distance
Isolation Distance
Unit (MIN.)
4 mm
4 mm
0.4 mm
2
Data Sheet PN10061EJ01V0DS
PS2911-1
ORDERING INFORMATION
Part Number
PS2911-1-F3
PS2911-1-F4
Package
4-pin ultra
small flat-lead
Packing Style
Embossed Tape 3 500 pcs/reel
Application Part Number
PS2911-1
*1
*1
For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, unless otherwise specified)
°
Parameter
Diode
Forward Current
Forward Current Derating
Peak Forward Current
Power Dissipation
Reverse Voltage
Transistor
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
Isolation Voltage
*2
*1
Symbol
I
F
Ratings
50
0.5
0.5
60
6
40
5
40
1.2
120
2 500
160
−55
to +100
−55
to +150
Unit
mA
mA/°C
A
mW
V
V
V
mA
mW/°C
mW
Vr.m.s.
mW
°C
°C
∆
I
F
/°C
I
FP
P
D
V
R
V
CEO
V
ECO
I
C
∆
P
C
/°C
P
C
BV
P
T
T
A
T
stg
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
*1
PW = 100
µ
s, Duty Cycle = 1%
*2
AC voltage for 1 minute at T
A
= 25°C, RH = 60% between input and output
Data Sheet PN10061EJ01V0DS
3
PS2911-1
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
°
Parameter
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
Transistor
Collector to Emitter Dark
Current
Current Transfer Ratio
*1
(I
C
/I
F
)
Collector Saturation Voltage
Isolation Resistance
Isolation Capacitance
Rise Time
Fall Time
On Time
*2
Symbol
V
F
I
R
C
t
I
CEO
I
F
= 1 mA
V
R
= 5 V
Conditions
MIN.
0.9
TYP.
1.1
MAX.
1.3
5
Unit
V
µ
A
pF
V = 0 V, f = 1 MHz
I
F
= 0 mA, V
CE
= 40 V
15
100
nA
Coupled
CTR
I
F
= 1 mA, V
CE
= 5 V
100
200
400
%
V
CE (sat)
R
I-O
C
I-O
t
r
t
f
t
on
I
F
= 1 mA, I
C
= 0.2 mA
V
I-O
= 1 kV
DC
V = 0 V, f = 1 MHz
V
CC
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
10
11
0.13
0.3
V
Ω
0.4
5
10
pF
µ
s
*2
*2
*2
V
CC
= 5 V, I
F
= 1 mA, R
L
= 5 kΩ
40
10
120
µ
s
µ
s
µ
s
Storage Time
Off Time
*2
t
s
t
off
*1
CTR rank
N : 100 to 400 (%)
K : 200 to 400 (%)
L : 150 to 300 (%)
M : 100 to 200 (%)
*2
Test circuit for switching time
Pulse Input
PW = 100
µ
s
Duty cycle = 1/10
I
F
In monitor
50
Ω
R
L
= 100
Ω
V
OUT
V
CC
CAUTIONS REGARDING NOISE
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
corrector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute
maximum ratings.
4
Data Sheet PN10061EJ01V0DS
PS2911-1
TYPICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise specified)
°
MAXIMUM FORWARD CURRENT vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
80
140
120
100
80
60
40
20
0
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Maximum Forward Current I
F
(mA)
60
40
0.5 mA/˚C
20
0
25
50
75
100
25
50
75
100
125
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
20
18
CTR = 200%
I
F
= 5 mA
10
T
A
= +100˚C
+60˚C
+25˚C
Collector Current I
C
(mA)
Forward Current I
F
(mA)
16
14
12
10
8
6
4
2
1
0˚C
–25˚C
–50˚C
2 mA
1 mA
0.5 mA
2
4
6
8
10
0.1
0.01
0.0
0.5
1.0
1.5
2.0
0
Forward Voltage V
F
(V)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
10 000
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
10
CTR = 200%
5 mA
2 mA
1 000
V
CE
= 20 V
40 V
100
Collector Current I
C
(mA)
1 mA
1
I
F
= 0.5 mA
10
1
–25
0
25
50
75
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage V
CE(sat)
(V)
Data Sheet PN10061EJ01V0DS
5
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