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KBPC104

Description
Bridge Rectifier Diode, 3A, 400V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size63KB,2 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric Compare View All

KBPC104 Overview

Bridge Rectifier Diode, 3A, 400V V(RRM),

KBPC104 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Microelectronics
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current50 A
Number of components4
Maximum operating temperature125 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage400 V
surface mountNO
BL
FEATURES
GALAXY ELECTRICAL
KBPC1005 --- KBPC110
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 3.0 A
SILICON BRIDGE RECTIFIERS
Rating to 1000V PRV
Surge overload rating to 50 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
KBPC1
.150
.140
.445(11.31)
.405(10.29)
.620(15.71)
.580(14.96)
.032(.81)
.028(.71)
.75
(19)
MIN
KBPC1
A
270(6.86)
230(4.9)
213(5.4)
193(4.9)
A
BR3
inch (mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
KBPC KBPC KBPC KBPC KBPC KBPC KBPC
UNITS
1005
101
102
104
106
108
110
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=25
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
3.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 1.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
50.0
A
V
F
I
R
T
J
T
STG
1.1
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
V
μA
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287031
BL
GALAXY ELECTRICAL
1.

KBPC104 Related Products

KBPC104 KBPC101 KBPC106 KBPC102
Description Bridge Rectifier Diode, 3A, 400V V(RRM), Bridge Rectifier Diode, 3A, 100V V(RRM), Bridge Rectifier Diode, 3A, 600V V(RRM), Bridge Rectifier Diode, 3A, 200V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to
Maker Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics
Reach Compliance Code unknown unknown unknown unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A
Number of components 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Maximum output current 3 A 3 A 3 A 3 A
Maximum repetitive peak reverse voltage 400 V 100 V 600 V 200 V
surface mount NO NO NO NO

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