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JANTXV2N6250

Description
Power Bipolar Transistor, 10A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size169KB,3 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
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JANTXV2N6250 Overview

Power Bipolar Transistor, 10A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-3, 2 PIN

JANTXV2N6250 Parametric

Parameter NameAttribute value
MakerMACOM
package instructionTO-3, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage275 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusQualified
GuidelineMIL-19500/510D
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
NPN High Power Silicon Transistors
2N6249, 2N6250, 2N6251
Features
Available in JAN, JANTX, and JANTXV
per MIL-PRF-19500/371
TO-3 (TO-204AA) Package
Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ TA = +25 °C (1)
@ TA = +25 °C (2)
Symbol
VCEO
VCBO
VEBO
IC
IB
PT
TOP, Tstg
2N6249
200
300
2N6250
275
375
6.0
10
5.0
6.0
175
-65 to +200
2N6251
350
450
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
°C
Operating & Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 34.2 mW/°C for TA > +25°C
2) Derate linearly @ 1.0 mW/°C for TC > +75°C
Symbol
R
θJC
Maximum
1.25
Units
°C/W
Electrical Characteristics
OFF Characteristics
Collector-Emitter Breakdown Voltage
IC = 20 mAdc, L = 42 mH, f = 30-60 GHz
(See Figure 10 of MIL-PRF-19500/510)
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, L = 14 mH, f = 30-60 GHz
(See Figure 10 of MIL-PRF-19500/510)
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
Symbol
I(BR)CEO
Mimimum
---
Maximum
200
275
350
225
300
375
100
Units
Vdc
I(BR)CER
---
Vdc
IEBO
2N6249
2N6250
2N6251
---
μAdc
Collector-Emitter Cutoff Current
VCE = 150 Vdc
VCE = 225 Vdc
VCE = 225 Vdc
Collector-Emitter Cutoff Current
VCE = 225 Vdc, VBE = -1.5 Vdc
VCE = 300 Vdc, VBE = -1.5 Vdc
VCE = 375 Vdc, VBE = -1.5 Vdc
ICEO
---
1.0
mAdc
2N6249
2N6250
2N6251
ICEX
---
100
μAdc
Revision Date: 8/5/2012
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