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KM736V687AT-7

Description
Cache SRAM, 64KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
Categorystorage    storage   
File Size469KB,16 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

KM736V687AT-7 Overview

Cache SRAM, 64KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

KM736V687AT-7 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeQFP
package instructionLQFP, QFP100,.63X.87
Contacts100
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time7.5 ns
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee0
length20 mm
memory density2359296 bit
Memory IC TypeCACHE SRAM
memory width36
Number of functions1
Number of terminals100
word count65536 words
character code64000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.02 A
Minimum standby current3.14 V
Maximum slew rate0.25 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
KM736V687A
Document Title
64Kx36-Bit Synchronous Burst SRAM
64Kx36 Synchronous SRAM
Revision History
Rev. No.
0.0
0.1
History
Initial draft
Change DC Characteristics.
I
CC
value from 320mA to 250mA at -7.
I
CC
value from 300mA to 230mA at -8.
I
CC
value from 280mA to 200mA at -9.
I
SB
value from 90mA to 70mA at -7.
I
SB
value from 80mA to 60mA at -8.
I
SB
value from 70mA to 50mA at -9.
I
SB1
value from 30mA to 20mA
I
SB2
value from 30mA to 20mA
Final spec release.
Add V
DDQ
Supply voltage( 2.5V )
Min t
OH
Parameter Change : from 2.0ns to 3.0ns
Min t
LZC
Parameter Change : from 0ns to 3ns
Draft Date
July. 03. 1998
Sep. 14. 1998
Remark
Preliminary
Preliminary
1.0
2.0
3.0
Nov. 16. 1998
Dec. 02. 1998
Dec. 17. 1998
Fianl
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
December 1998
Rev 3.0

KM736V687AT-7 Related Products

KM736V687AT-7 KM736V687AT-8 32F746GDISCOVERY
Description Cache SRAM, 64KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100 Cache SRAM, 64KX36, 8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100 Camera connector
Is it Rohs certified? incompatible incompatible -
Maker SAMSUNG SAMSUNG -
Parts packaging code QFP QFP -
package instruction LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87 -
Contacts 100 100 -
Reach Compliance Code unknown unknown -
ECCN code 3A991.B.2.A 3A991.B.2.A -
Maximum access time 7.5 ns 8 ns -
I/O type COMMON COMMON -
JESD-30 code R-PQFP-G100 R-PQFP-G100 -
JESD-609 code e0 e0 -
length 20 mm 20 mm -
memory density 2359296 bit 2359296 bit -
Memory IC Type CACHE SRAM CACHE SRAM -
memory width 36 36 -
Number of functions 1 1 -
Number of terminals 100 100 -
word count 65536 words 65536 words -
character code 64000 64000 -
Operating mode SYNCHRONOUS SYNCHRONOUS -
Maximum operating temperature 70 °C 70 °C -
organize 64KX36 64KX36 -
Output characteristics 3-STATE 3-STATE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code LQFP LQFP -
Encapsulate equivalent code QFP100,.63X.87 QFP100,.63X.87 -
Package shape RECTANGULAR RECTANGULAR -
Package form FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE -
Parallel/Serial PARALLEL PARALLEL -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
power supply 3.3 V 3.3 V -
Certification status Not Qualified Not Qualified -
Maximum seat height 1.6 mm 1.6 mm -
Maximum standby current 0.02 A 0.02 A -
Minimum standby current 3.14 V 3.14 V -
Maximum slew rate 0.25 mA 0.23 mA -
Maximum supply voltage (Vsup) 3.6 V 3.6 V -
Minimum supply voltage (Vsup) 3.135 V 3.135 V -
Nominal supply voltage (Vsup) 3.3 V 3.3 V -
surface mount YES YES -
technology CMOS CMOS -
Temperature level COMMERCIAL COMMERCIAL -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form GULL WING GULL WING -
Terminal pitch 0.65 mm 0.65 mm -
Terminal location QUAD QUAD -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
width 14 mm 14 mm -
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