K9F6408U0C
FLASH MEMORY
Document Title
8M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
0.1
Initial issue.
1. I
OL
(R/B) of 1.8V device is changed.
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
2. Package part number is modified.
K9F6408U0C-Y ---> K9F6408U0C_T
3. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
0.2
1. TBGA package is changed.
- 9mmX11mm 63ball TBGA ---> 6mmX8.5mm 48ball TBGA
2. Part number(TBGA package part number) is changed
- K9F6408Q0C-D ----> K9F6408Q0C-B
- K9F6408U0C-D -----> K9F6408U0C-B
3. K9F6408U0C-BCB0,BIB0 products are added
0.3
1. WSOP1 package is added.
- Part number : K9F6408U0C_VCB0,VIBO
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 28)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 29)
The min. Vcc value 1.8V devices is changed.
K9F64XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F6408U0C-QCB0,QIB0
K9F6408U0C-HCB0,HIB0
K9F6408Q0C-HCB0,HIB0
K9F6408U0C-FCB0,FIB0
Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.
1. PKG(WSOP1) Dimension Change
Mar. 13 . 2002
Nov. 21. 2002
Nov. 12 . 2001
Draft Date
Jul. 24 . 2001
Nov. 5 . 2001
Remark
Advance
Preliminary
0.4
0.5
Mar. 05. 2003
0.6
Mar. 13 . 2003
0.7
Jul. 04. 2003
0.8
0.9
Apr. 24. 2004
May. 24. 2004
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the
SAMSUNG branch office near you.
1
K9F6408U0C
FLASH MEMORY
Document Title
8M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
1.0
1. NAND Flash Technical Notes is changed.
-Invalid block -> initial invalid block ( page 13)
-Error in write or read operation ( page 14 )
-Program Flow Chart ( page 14 )
1. The flow chart to creat the initial invalid block table is changed.
Draft Date
Oct. 25th. 2004
Remark
1.1
May 6th. 2005
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the
SAMSUNG branch office near you.
2
K9F6408U0C
FLASH MEMORY
8M x 8 Bit Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9F6408U0C-B,H
K9F6408U0C-T,Q
K9F6408U0C-V,F
2.7 ~ 3.6V
X8
Vcc Range
Organization
PKG Type
TBGA
TSOP II
WSOP I
FEATURES
•
Voltage Supply
- 1.70~1.95V
•
Organization
- Memory Cell Array : (8M + 256K)bit x 8bit
- Data Register
: (512 + 16)bit x8bit
•
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (8K + 256)Byte
•
528-Byte Page Read Operation
- Random Access : 10µs(Max.)
- Serial Page Access
- 50ns
•
Fast Write Cycle Time
- Program Time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
•
Command Register Operation
•
Package
- K9F6408U0C-TCB0/TIB0
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
- K9F6408U0C-BCB0/BIB0
48 - Ball TBGA ( 6 x 8.5 /0.8mm pitch , Width 1.0 mm)
- K9F6408U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F6408U0C-QCB0/QIB0 : Pb-free Package
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
- K9F6408U0C-HCB0/HIB0 : Pb-free Package
48 - Ball TBGA ( 6 x 8.5 /0.8mm pitch , Width 1.0 mm)
- K9F6408U0C-FCB0/FIB0 : Pb-free Package
48 - Pin WSOP I (12X17X0.7mm)
* K9F6408U0C-V,F(WSOPI ) is the same device as
K9F6408U0C-T,Q(TSOPII) except package type.
GENERAL DESCRIPTION
The K9F6408U0C is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. The device is offered in 3.3V Vcc.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the
528-byte page in typical 200µs and an erase operation can be performed in typical 2ms on an 8K-byte block. Data in the page can be
read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs.
The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verifi-
cation and margining of data. Even the write-intensive systems can take advantage of the K9F6408U0C′s extended reliability of 100K
program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. These algorithms have been
implemented in many mass storage applications and also the spare 16 bytes of a page combined with the other 512 bytes can be uti-
lized by system-level ECC. The K9F6408U0C is an optimum solution for large nonvolatile storage applications such as solid state file
storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility.
3
K9F6408U0C
PIN CONFIGURATION (TSOP II )
K9F6408U0C-TCB0,QCB0/TIB0,QIB0
V
SS
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
V
CC
CE
RE
R/B
GND
N.C
N.C
N.C
N.C
N.C
FLASH MEMORY
N.C
N.C
N.C
N.C
N.C
I/O0
I/O1
I/O2
I/O3
V
SS
N.C
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
V
CC
PACKAGE DIMENSIONS
44(40) LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(II)
44(40) - TSOP II - 400F
0~8°
0.25
0.010 TYP
#44(40)
#23(21)
0.45~0.75
0.018~0.030
11.76
±0.20
0.463
±0.008
10.16
0.400
0.50
0.020
#1
#22(20)
0.15
-0.05
18.81
Max.
0.741
18.41
±0.10
0.725
±0.004
1.00
±0.10
0.039
±0.004
+0.10
Unit :mm/Inch
0.006
-0.002
1.20
Max.
0.047
+0.004
0.10
MAX
0.004
0.05
Min.
0.002
(
0.805
)
0.032
0.35
±0.10
0.014
±0.004
0.80
0.0315
4
K9F6408U0C
PIN CONFIGURATION (TBGA)
K9F6408U0C-BCB0,HCB0/BIB0,HIB0
1
2
3
4
5
6
FLASH MEMORY
A
WP
N.C
N.C
N.C
N.C
N.C
N.C
V
SS
ALE
RE
N.C
N.C
N.C
I/O
0
I/O
1
I/O
2
N.C
CLE
N.C
N.C
N.C
N.C
N.C
I/O
3
CE
N.C
N.C
N.C
N.C
N.C
WE
N.C
N.C
N.C
N.C
N.C
R/B
N.C
N.C
N.C
N.C
V
CC
I/O
7
V
SS
B
C
D
E
F
G
V
CCQ
I/O
5
I/O
4
I/O
6
H
(Top View)
PACKAGE DIMENSIONS
48-Ball TBGA (measured in millimeters)
Top View
Bottom View
6.00
±0.10
0.80 x5= 4.00
6.00
±0.10
0.80
(Datum A)
A
6
A
5
4
3
2
1
Ball #A1
(Datum B)
B
0.80 x7= 5.60
C
D
E
2.80
F
G
H
48-∅0.45
±0.05
∅
0.20
M
A B
8.50
±0.10
0.80
2.00
Side View
0.90
±0.10
0.32
±0.05
0.45
±0.05
0.08MAX
6.00
±0.10
5
8.50
±0.10
B
京公网安备 11010802033920号
EEWORLD
